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Leakage current reduction by new technique in standby mode
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Source Great Lakes Symposium on VLSI archive
Proceedings of the 14th ACM Great Lakes symposium on VLSI table of contents
Boston, MA, USA
POSTER SESSION: Poster Session 1 table of contents
Pages: 158 - 161  
Year of Publication: 2004
ISBN:1-58113-853-9
Authors
A. Amirabadi  University of Tehran
J. Jafari  University of Tehran
A. Afzali-Kusha  University of Tehran
M. Nourani  University of Texas at Dallas
A. Khaki-Firooz  Massachusetts Institute of Technology
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

In this paper, a new approach for reducing the subthreshold leakage current of digital circuits is proposed. It does not use a multi-threshold process technique which is more expensive. The technique which makes to use of a new variable supply voltage oscillator, combines the ideas of both Standby Leakage Control Using Transistor Stacks (SRB) and variable threshold (VT) methods. In this technique compared to the Leakage Control Using Transistor Stacks method, the subthreshold current decreases three times. In addition, leakage current monitor (LCM) and its related circuits which are used in VT techniques are not required here. This makes the proposed technique more power and area efficient.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
T. Kuoda, T. Fujita, S. Mita, T. Nagamatu, S.Yoshioka, K. Suzuki, F.Sano, M. Norishima, M. Murota, M. Kako, M. Kinugawa, M. Kakumu, and T. Sakurai, "A 0.9 V 150 MHz 10 mW 4 mm2 2-D Discrete Cosine Transform Core Processor with Variable Threshold-voltage (VT) Scheme," IEEE J. Solid -State Circuits, vol. 31, no. 11, pp. 1770--1779, Nov. 1996.
 
2
T. Kuroda, T. Fujita, T. Nagamatu, S. Yoshioka, T. Sei, K. Matsuo, Y. Hamura, T. Mori, M. Murota, M. Kakuma, and T. Sakurai, " A High-speed Low-power 0.3 μm CMOS Gate Array with Variable Threshold Voltage (VT) Scheme," Proc. CICC'96, pp. 53--56, May 1996.
 
3
T. Kawahara, M. Horiguchi, Y. Kawajiri, G. Kitsukawa, T. Kure and M. Aoki "Subthreshold Current Reduction for Decoded-Driver by Self-Reverse Biasing" IEEE J. Solid -State Circuits, vol. 28, no. 11, pp. 1136--1144, Nov. 1993.
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H. Kawaguchi, K. Nose, and T. Sakurai, "A Super Cut-Off CMOS (SCCMOS) Scheme for 0.5-v Supply Voltage with Picoampere Stand-by Current," IEEE J. Solid State Circuits, vol. 35, no. 10 Oct 2000.
 
6
Berkeley Predictive Technology Model (BPTM), "http://www.device.eecs.berkeley.edu/~ptm.

Collaborative Colleagues:
A. Amirabadi: colleagues
J. Jafari: colleagues
A. Afzali-Kusha: colleagues
M. Nourani: colleagues
A. Khaki-Firooz: colleagues