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The 10GHz 4:1 MUX and 1:4 DEMUX implemented via the gigahertz SiGe FPGA
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Source Great Lakes Symposium on VLSI archive
Proceedings of the 14th ACM Great Lakes symposium on VLSI table of contents
Boston, MA, USA
POSTER SESSION: Poster Session 1 table of contents
Pages: 141 - 144  
Year of Publication: 2004
ISBN:1-58113-853-9
Authors
Jong-Ru Guo  Rensselaer Polytechnic Institute, Troy, NY
C. You  Rensselaer Polytechnic Institute, Troy, NY
P. F. Curran  Rensselaer Polytechnic Institute, Troy, NY
M. Chu  Rensselaer Polytechnic Institute, Troy, NY
K. Zhou  Rensselaer Polytechnic Institute, Troy, NY
J. Diao  Rensselaer Polytechnic Institute, Troy, NY
A. George  Rensselaer Polytechnic Institute, Troy, NY
R P Kraft  Rensselaer Polytechnic Institute, Troy, NY
J. F. McDonald  Rensselaer Polytechnic Institute, Troy, NY
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 38,   Downloads (12 Months): 93,   Citation Count: 1
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ABSTRACT

This paper describes the implementation of a scalable SiGe FPGA that serves as a high speed FPGA test platform. A new configurable block (Basic Cell) has been evolved from the Xilinx 6200 specification, and is designed to perform in the gigahertz range. Two chips, a 4:1 multiplexer and 1:4 demultiplexer, were designed using the IBM SiGe 7HP process. The two designs can process 10 Gbps data streams.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Greg Freeman et al, "40 Gb/s Circuits Built from a 120 GHz fT SiGe Technology", IEEE Journal of Solid State Circuits, vol. 9. September, 2002, pp. 1106--1114.
 
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John D. Cressler, "SiGE HBT Technology: A New Contender for Si-Based RF and Microwave Circuit Applications", IEEE Transactions on Microwave Theory and Techniques, VOL. 46, NO. 5, 1998.
 
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G. Freeman et al, "40 Gb/s Circuits Built From a 120-GHz fT SiGe Technology" IEEE Journal of Solid-State Circuits, Vol. 37, NO. 9, 2002, pp 1106--1114.
 
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K. Ishii et al, "Low-Power 1:16DEMUX and One-Chip CDR With 1:4 DEMUX Using InP-InGaAs Heterojunction Bipolar Transistors", IEEE Journal of Solid-State Circuits, Vol. 37, NO. 9, 2002, pp 1146--1151.
 
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U. Nellore, et al, "Low-Power Fully Integrated 10 Gb/s SONET/SDH Transceiver in 0.13-um CMOS" IEEE Journal of Solid-State Circuits, Vol. 38, NO. 10, 2003, pp 1595--1.


Collaborative Colleagues:
Jong-Ru Guo: colleagues
C. You: colleagues
P. F. Curran: colleagues
M. Chu: colleagues
K. Zhou: colleagues
J. Diao: colleagues
A. George: colleagues
R P Kraft: colleagues
J. F. McDonald: colleagues