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Efficient techniques for gate leakage estimation
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Source International Symposium on Low Power Electronics and Design archive
Proceedings of the 2003 international symposium on Low power electronics and design table of contents
Seoul, Korea
SESSION: Leakage estimation table of contents
Pages: 100 - 103  
Year of Publication: 2003
ISBN:1-58113-682-X
Authors
Rahul M. Rao  University of Michigan, Ann Arbor, MI
Jeffrey L. Burns  IBM, Austin, TX
Anirudh Devgan  IBM, Austin, TX
Richard B. Brown  University of Michigan, Ann Arbor, MI
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 3,   Downloads (12 Months): 38,   Citation Count: 6
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ABSTRACT

Gate leakage current is expected to be the dominant leakage component in future technology generations. In this paper, we propose methods for steady-state gate leakage estimation based on state characterization. An efficient technique for pattern-dependent gate leakage estimation is presented. Further, we propose the use of this technique for estimating the average gate leakage of a circuit using pattern-independent probabilistic analysis. Results on a large set of benchmark ISCAS circuits show an accuracy within 5% of SPICE results with 500X to 50000X speed improvement.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
International Technology Roadmap for SemiConductors, http://public.itrs.net/Files/2001ITRS/Home.html.
 
2
R. Langevelde, A. Scholten, R. Duffy, F. Cubaynes, M. Knitel and D. Klaassen, "Gate current: Modeling, Extraction and impact on RF performance,"
 
3
Y.C. Yeo, et.al, "Direct Tunneling Gate Leakage Current in Transistors with Ultrathin Silicon Nitride Gate Dielectric," IEEE Electron Device Letters, vol. 21, no. 11, pp. 540--542, Nov. 2000.
 
4
C. T. Chuang and R. Puri, "Effects of Gate-to-Body Tunneling Current on Pass-Transistor Based PD/SOI CMOS Circuits," IEEE Intnl. SOI Conf., pp. 121--122, Oct. 2002.
 
5
C. Choi, K. Nam, Z. Yu and R. Dutton, "Impact of Gate Direct Tunneling Current on Circuit Performance: A Simulation Study," IEEE Trans. on Electron Devices, vol. 48, no. 12, pp. 2823--2829, Dec. 2001.
6
 
7
K. Yang, et.al, "Edge Hole Direct Tunneling Leakage in Ultrathin Gate Oxide p-Channel MOSFETs," IEEE Trans. on Electron Devices, vol. 48, no. 12, pp. 2790--2795, Dec. 2001.
8


Collaborative Colleagues:
Rahul M. Rao: colleagues
Jeffrey L. Burns: colleagues
Anirudh Devgan: colleagues
Richard B. Brown: colleagues