| Efficient techniques for gate leakage estimation |
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International Symposium on Low Power Electronics and Design
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Proceedings of the 2003 international symposium on Low power electronics and design
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Seoul, Korea
SESSION: Leakage estimation
table of contents
Pages: 100 - 103
Year of Publication: 2003
ISBN:1-58113-682-X
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Downloads (6 Weeks): 3, Downloads (12 Months): 38, Citation Count: 6
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ABSTRACT
Gate leakage current is expected to be the dominant leakage component in future technology generations. In this paper, we propose methods for steady-state gate leakage estimation based on state characterization. An efficient technique for pattern-dependent gate leakage estimation is presented. Further, we propose the use of this technique for estimating the average gate leakage of a circuit using pattern-independent probabilistic analysis. Results on a large set of benchmark ISCAS circuits show an accuracy within 5% of SPICE results with 500X to 50000X speed improvement.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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International Technology Roadmap for SemiConductors, http://public.itrs.net/Files/2001ITRS/Home.html.
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R. Langevelde, A. Scholten, R. Duffy, F. Cubaynes, M. Knitel and D. Klaassen, "Gate current: Modeling, Extraction and impact on RF performance,"
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Y.C. Yeo, et.al, "Direct Tunneling Gate Leakage Current in Transistors with Ultrathin Silicon Nitride Gate Dielectric," IEEE Electron Device Letters, vol. 21, no. 11, pp. 540--542, Nov. 2000.
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C. T. Chuang and R. Puri, "Effects of Gate-to-Body Tunneling Current on Pass-Transistor Based PD/SOI CMOS Circuits," IEEE Intnl. SOI Conf., pp. 121--122, Oct. 2002.
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C. Choi, K. Nam, Z. Yu and R. Dutton, "Impact of Gate Direct Tunneling Current on Circuit Performance: A Simulation Study," IEEE Trans. on Electron Devices, vol. 48, no. 12, pp. 2823--2829, Dec. 2001.
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K. Yang, et.al, "Edge Hole Direct Tunneling Leakage in Ultrathin Gate Oxide p-Channel MOSFETs," IEEE Trans. on Electron Devices, vol. 48, no. 12, pp. 2790--2795, Dec. 2001.
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Emrah Acar , Anirudh Devgan , Rahul Rao , Ying Liu , Haihua Su , Sani Nassif , Jeffrey Burns, Leakage and leakage sensitivity computation for combinational circuits, Proceedings of the 2003 international symposium on Low power electronics and design, August 25-27, 2003, Seoul, Korea
[doi> 10.1145/871506.871532]
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CITED BY 6
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Paulo F. Butzen , Leomar S. Rosa Jr. , Erasmo J.D. Chiappetta Filho , Dionatan S. Moura , Andre I. Reis , Renato P. Ribas, Simple and accurate method for fast static currentestimation in cmos complex gates with interaction ofleakage mechanisms, Proceedings of the 18th ACM Great Lakes symposium on VLSI, May 04-06, 2008, Orlando, Florida, USA
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