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ABSTRACT
We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributions of individual gate leakage currents are then combined to obtain the mean and variance of the leakage current for an entire circuit. We also present an approach to account for both the inter- and intra-die gate length variations to ensure that the circuit leakage PDF correctly models both types of variation. The proposed methods were implemented and tested on a number of benchmark circuits. Comparison to Monte-Carlo simulation validates the accuracy of the proposed method and demonstrates the efficiency of the proposed analysis method. Comparison with traditional deterministic leakage current analysis demonstrates the need for statistical methods for leakage current analysis.
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Amit Agarwal , Kunhyuk Kang , Swarup K. Bhunia , James D. Gallagher , Kaushik Roy, Effectiveness of low power dual-Vt designs in nano-scale technologies under process parameter variations, Proceedings of the 2005 international symposium on Low power electronics and design, August 08-10, 2005, San Diego, CA, USA
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