ACM Home Page
Please provide us with feedback. Feedback
Static leakage reduction through simultaneous threshold voltage and state assignment
Full text PdfPdf (144 KB)
Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 40th annual Design Automation Conference table of contents
Anaheim, CA, USA
SESSION: Managing leakage power table of contents
Pages: 191 - 194  
Year of Publication: 2003
ISBN:1-58113-688-9
Authors
Dongwoo Lee  University of Michigan, Ann Arbor, MI
David Blaauw  University of Michigan, Ann Arbor, MI
Sponsor
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 4,   Downloads (12 Months): 29,   Citation Count: 11
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/775832.775881
What is a DOI?

ABSTRACT

We propose a new method that uses a combined approach of sleep-state assignment and threshold voltage (Vt) assignment in a dual-Vt process. While each of these methods has previously been used individually, their combined effect has not been leveraged to date. By combining Vt and sleep-state assignment, leakage current can be dramatically reduced since the circuit is in a known state in standby-mode and only transistors that are off need to be considered for high-Vt assignment. A significant improvement in the leakage/ performance trade-off is therefore achievable using such a combined method. We formulate the optimization problem for simultaneous state and Vt assignment under delay constraints and propose both an exact method for its optimal solution as well as a number of practical heuristics with reasonable run time. We compare our results with Vt and sleep state assignment only and demonstrate an average decrease in leakage current of 3.5X compared to previous approaches.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
J.Halter and F.Najm, "A gate-level leakage power reduction method for ultra-low-power CMOS circuits," Proc. CICC, pp. 475--478, 1997.
 
2
M.C. Johnson, et al., "Models and algorithms for bounds on leakage in CMOS circuits," IEEE Trans. CAD, pp. 714--725, June 1999.
 
3
4
 
5
V.De, et al., "Techniques for leakage power reduction," in Design of high-performance microprocessor circuits, New York: IEEE press, 2001
 
6
H.Kriplani, et al., "Pattern independent maximum current estimation in power and ground buses of CMOS VLSI circuits: algorithms, signal correlations, and their resolution," IEEE Trans. CAD, pp998--1012, Aug. 1995.
 
7
F. Brglez and H.Fujiwara, "A Neutral Netlist of 10 Combinatorial Benchmark Circuits", Proc. ISCAS, 1985, pp.695--698.
 
8

CITED BY  11

Collaborative Colleagues:
Dongwoo Lee: colleagues
David Blaauw: colleagues