| Implications of technology scaling on leakage reduction techniques |
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Annual ACM IEEE Design Automation Conference
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Proceedings of the 40th annual Design Automation Conference
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Anaheim, CA, USA
SESSION: Managing leakage power
table of contents
Pages: 187 - 190
Year of Publication: 2003
ISBN:1-58113-688-9
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Downloads (6 Weeks): 8, Downloads (12 Months): 24, Citation Count: 3
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ABSTRACT
The impact of technology scaling on three run-time leakage reduction techniques (Input Vector Control, Body Bias Control and Power Supply Gating) is evaluated by determining limits and benefits, in terms of the potential leakage reduction, performance penalty, and area and power overhead in 0.25um, 0.18um, and 0.07um technologies. HSPICE simulation results and estimations with various functional units and memory structures are presented to support a comprehensive analysis.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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Siva Narendra , Vivek De , Dimitri Antoniadis , Anantha Chandrakasan , Shekhar Borkar, Scaling of stack effect and its application for leakage reduction, Proceedings of the 2001 international symposium on Low power electronics and design, p.195-200, August 2001, Huntington Beach, California, United States
[doi> 10.1145/383082.383132]
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A. Keshavarzi , S. Ma , S. Narendra , B. Bloechel , K. Mistry , T. Ghani , S. Borkar , V. De, Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs, Proceedings of the 2001 international symposium on Low power electronics and design, p.207-212, August 2001, Huntington Beach, California, United States
[doi> 10.1145/383082.383135]
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Ye, Y., Borkar, S., and De, V., "A New Technique for Standby Leakage Reduction in High-Performance Circuits," Sym. on VLSI Circuits, pp. 40--41, 1998
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Halter J., and Najm, F., "A Gate-level Leakage Power Reduction Method for Ultra Low Power CMOS Circuits, IEEE CICC, pp. 475--478, 1997.
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