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Implications of technology scaling on leakage reduction techniques
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 40th annual Design Automation Conference table of contents
Anaheim, CA, USA
SESSION: Managing leakage power table of contents
Pages: 187 - 190  
Year of Publication: 2003
ISBN:1-58113-688-9
Authors
Y.-F. Tsai  Penn State University
D. Duarte  LTD, Intel Corporation
N. Vijaykrishnan  Penn State University
M. J. Irwin  Penn State University
Sponsor
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 5,   Downloads (12 Months): 24,   Citation Count: 3
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ABSTRACT

The impact of technology scaling on three run-time leakage reduction techniques (Input Vector Control, Body Bias Control and Power Supply Gating) is evaluated by determining limits and benefits, in terms of the potential leakage reduction, performance penalty, and area and power overhead in 0.25um, 0.18um, and 0.07um technologies. HSPICE simulation results and estimations with various functional units and memory structures are presented to support a comprehensive analysis.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

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Ye, Y., Borkar, S., and De, V., "A New Technique for Standby Leakage Reduction in High-Performance Circuits," Sym. on VLSI Circuits, pp. 40--41, 1998
 
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Halter J., and Najm, F., "A Gate-level Leakage Power Reduction Method for Ultra Low Power CMOS Circuits, IEEE CICC, pp. 475--478, 1997.
 
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Collaborative Colleagues:
Y.-F. Tsai: colleagues
D. Duarte: colleagues
N. Vijaykrishnan: colleagues
M. J. Irwin: colleagues