| A dual band CMOS VCO with a balanced duty cycle buffer |
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Great Lakes Symposium on VLSI
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Proceedings of the 13th ACM Great Lakes symposium on VLSI
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Washington, D. C., USA
POSTER SESSION: Poster session 2
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Pages: 277 - 280
Year of Publication: 2003
ISBN:1-58113-677-3
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Authors
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Yun Cheol Han
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Samsung Electronics Co., Yongin-City, Gyeonggi-Do, Korea
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Kwang il Kim
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Inha University, Yong-Hyun Dong, Nam-Gu, In-chon, Korea
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Jun Kim
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Inha University, Yong-Hyun Dong, Nam-Gu, In-chon, Korea
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Kwang Sub Yoon
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Inha University, Yong-Hyun Dong, Nam-Gu, In-chon, Korea
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Downloads (6 Weeks): 7, Downloads (12 Months): 33, Citation Count: 0
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ABSTRACT
This paper proposes a dual band VCO with a standard 0.35? CMOS process to generate 1.07GHz and 2.06GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder(HA) is able to produce a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561MHz/V and 14.6mW, respectively. The phase noises of the dual band VCO are measured to be -99.05dBc/Hz and -94.9dBc/Hz at 2MHz offset from 1.07GHz and 2.06GHz.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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