| Dynamic Vt SRAM: a leakage tolerant cache memory for low voltage microprocessors |
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International Symposium on Low Power Electronics and Design
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Proceedings of the 2002 international symposium on Low power electronics and design
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Monterey, California, USA
SESSION: Poster Session 3
table of contents
Pages: 251 - 254
Year of Publication: 2002
ISBN:1-58113-475-4
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Downloads (6 Weeks): 11, Downloads (12 Months): 55, Citation Count: 14
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ABSTRACT
This paper presents a Dynamic Vt SRAM (DTSRAM) architecture to reduce the subthreshold leakage in cache memories. The Vt of each cache line is controlled separately by means of body biasing. In order to minimize the energy and delay overhead, a cache line is switched to high Vt only when it is not likely to be accessed anymore. Simulation results from SimpleScalar framework show that even after considering the energy overhead, the DTSRAM can save 72% of the cache leakage with a performance loss less than 1%. Layout of the DTSRAM shows that the area penalty is minimal.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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CITED BY 14
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Shengqi Yang , Wayne Wolf , Wenping Wang , N. Vijaykrishnan , Yuan Xie, Low-leakage robust SRAM cell design for sub-100nm technologies, Proceedings of the 2005 conference on Asia South Pacific design automation, January 18-21, 2005, Shanghai, China
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Shengqi Yang , Wenping Wang , Tiehan Lu , Wayne Wolf , N. Vijaykrishnan , Yuan Xie, Case study of reliability-aware and low-power design, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, v.16 n.7, p.861-873, July 2008
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