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Energy recovering static memory
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Source International Symposium on Low Power Electronics and Design archive
Proceedings of the 2002 international symposium on Low power electronics and design table of contents
Monterey, California, USA
SESSION: Session 3 table of contents
Pages: 92 - 97  
Year of Publication: 2002
ISBN:1-58113-475-4
Authors
Joohee Kim  University of Michigan, Ann Arbor, MI
Conrad H. Ziesler  University of Michigan, Ann Arbor, MI
Marios C. Papaefthymiou  University of Michigan, Ann Arbor, MI
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 3,   Downloads (12 Months): 29,   Citation Count: 3
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ABSTRACT

This paper proposes an energy-recovering (a.k.a. adiabatic) static RAM with a novel driver that reduces power dissipation by efficiently recovering energy from the bit/word line capacitors. Powered by a single-phase sinusoidal power-clock, our SRAM delivers read and write operations with single-cycle latency. To that end, a precharge-low scheme is employed along with a modified sense amplifier design that achieves high efficiency at differential voltages near $VSS. A simple control circuit is used to maintain driver operation in synchrony with the power-clock waveform. Feedback circuitry from the driver output to the control circuit ensures that our driver remains efficient, independent of the access pattern. Our energy recovering SRAM functions correctly while achieving substantial energy savings over a wide range of supply voltages and operating frequencies. Hspice simulations of a simple full-custom adiabatic 256x256 SRAM, that includes the energy recovering bit/word line drivers, the cell array, and the sense amplifiers, show over 2.6x energy savings at 3V, 300MHz in comparison with its conventional counterpart.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
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2
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A.J. Bhavnagarwala, A. Kapoor, and J.D. Meindl, "Source-pulsed dynamic-threshold CMOS SRAMs for fast, portable applications," in European Solid State Circuits Conference, 2000, pp. 183--186.
 
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H. Nambu et al, "A 1.8-ns access, 550-MHz, 4.5-Mb CMOS SRAM," IEEE Journal of Solid-State Circuits, vol. 33, no. 11, pp. 1650--1658, November 1998.
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B.S. Amrutur and M.A. Horowitz, "A replica technique for wordline and sense control in low-power SRAM's," IEEE Journal of Solid-State Circuits, vol. 33, no. 8, pp. 1208--1219, August 1998.


Collaborative Colleagues:
Joohee Kim: colleagues
Conrad H. Ziesler: colleagues
Marios C. Papaefthymiou: colleagues