ACM Home Page
Please provide us with feedback. Feedback
Using silicon and gallium arsenide technologies for new supercomputer design
Full text PdfPdf (921 KB)
Source International Conference on Supercomputing archive
Proceedings of the 2nd international conference on Supercomputing table of contents
St. Malo, France
Pages: 604 - 610  
Year of Publication: 1988
ISBN:0-89791-272-1
Author
S. Nelson  Cray Research,Inc. Chippewa Falls, WI
Sponsor
SIGARCH: ACM Special Interest Group on Computer Architecture
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 8,   Downloads (12 Months): 16,   Citation Count: 0
Additional Information:

abstract   references   index terms  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/55364.55423
What is a DOI?

ABSTRACT

A comparison is made between emerging high performance silicon and gallium arsenide technologies for the design and manufacture of the next supercomputers. Material, device, circuit, packaging, and manufacturing issues make comparisons complex and competing design methodologies will continue.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
Grove, A.S. Physics and Technoloqv of Semiconductor Devices, p. 103. John Wiley & Sons, New York, 1967.
 
2
Sze, S.M. Physics of Semiconductor Devices, 2nd ed., p. 46. John Wiley & Sons, New York, 1981.