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Life is CMOS: why chase the life after?
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 39th annual Design Automation Conference table of contents
New Orleans, Louisiana, USA
SESSION: Life after CMOS: Imminent or Irrelevant? table of contents
Pages: 78 - 83  
Year of Publication: 2002
ISBN ~ ISSN:0738-100X , 1-58113-461-4
Authors
George Sery  Intel Corporation, Santa Clara, CA
Shekhar Borkar  Intel Corporation, Santa Clara, CA
Vivek De  Intel Corporation, Santa Clara, CA
Sponsor
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 10,   Downloads (12 Months): 56,   Citation Count: 13
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ABSTRACT

This paper discusses potential solutions to the CMOS device technology scaling at gate lengths approaching 10nm. Promising circuit and design techniques to control leakage power are described. Energy-efficient microarchitecture trends for general-purpose microprocessors are elucidated.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
R. Chau et al., "30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays", IEDM 2000, pp. 45--48.
 
2
R. Chau, "30nm and 20nm Physical Gate Length CMOS Transistors", Silicon Nanotechnology Workshop, 2001.
 
3
R. Chau et al., "A 50nm depleted-substrate CMOS transistor (DST)", IEDM 2001, pp. 621--624.
 
4
Fred Pollack; New Microarchitecture Challenges in the Coming Generations of CMOS Process Technologies; Micro32, 1999.

CITED BY  13

Collaborative Colleagues:
George Sery: colleagues
Shekhar Borkar: colleagues
Vivek De: colleagues