ACM Home Page
Please provide us with feedback. Feedback
Scaling of stack effect and its application for leakage reduction
Full text PdfPdf (575 KB)
Source International Symposium on Low Power Electronics and Design archive
Proceedings of the 2001 international symposium on Low power electronics and design table of contents
Huntington Beach, California, United States
Pages: 195 - 200  
Year of Publication: 2001
ISBN:1-58113-371-5
Authors
Siva Narendra  Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA and Microprocessor Research Laboratories, Intel Corporation, Hillsboro, OR
Vivek De  Microprocessor Research Laboratories, Intel Corporation, Hillsboro, OR
Dimitri Antoniadis  Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA
Anantha Chandrakasan  Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA
Shekhar Borkar  Microprocessor Research Laboratories, Intel Corporation, Hillsboro, OR
Sponsor
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 26,   Downloads (12 Months): 108,   Citation Count: 29
Additional Information:

references   cited by   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/383082.383132
What is a DOI?

REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
S. Borkar, "Technology Trends and Design Challenges for Microprocessor Design", ESSIRC, pp. 7-8, Sep. 1998.
 
2
A. Chandrakasan, S. Sheng, and R. W. Brodersen, "Low-Power CMOS Digital design", IEEE J. Solid-State Circuits, vol. 27, pp. 473-484, Apr. 1992.
 
3
D. Antoniadis and J. E. Chung, "Physics and Technology of Ultra Short Channel MOSFET Devices", Intl. Electron devices Meeting, pp. 21-24, 1991.
4
 
5
Z. Chen, J. Shott, J. Burr, and J. D. Plummer, "CMOS Technology Scaling for Low Voltage Low Power Applications", IEEE Symp. Low Power Elec., pp. 56-57, 1994.
 
6
 
7
Y. Ye, S. Borkar, and V. De, "A Technique for Standby Leakage Reduction in High-Performance Circuits," Symp. of VLSI Circuits, pp. 40-41, 1998.
 
8
J. P. Halter and F. Najm, "A gate-level leakage power reduction method for ultra-low-power CMOS circuits," Custom Integrated Circuits Conf., pp. 475-478, 1997.
9
 
10
L. Su, R. Schulz, J. Adkisson, K. Beyer, G. Biery, W. Cote, E. Crabbe, D. Edelstein, J. Ellis-Monaghan, E. Eld, D. Foster, R. Gehres, R. Goldblatt, N. Greco, C. Guenther, J. Heidenreich, J. Herman, D. Kiesling, L. Lin, S-H. Lo, McKenn, "A high-performance sub-0.25mm CMOS technology with multiple thresholds and copper interconnects," Intl. Symp. on VLSI Technology, Systems, and Applications, pp. 18-19, 1998.
11
 
12
Z. Liu, C. Hu, J. Huang, T. Chan, M. Jeng, P. Ko, and Y. Cheng, "Threshold Voltage Model for Deep-Submicrometer MOSFET's," IEEE Trans. Elec. Devices, vol. 40, no. 1, pp. 86-95, January 1993.
 
13
Y. Taur, "CMOS Scaling beyond 0.1mm: how far can it go?" Intl. Symp. on VLSI Technology, Systems, and Applications, pp. 6-9, 1999.
 
14
S. Tyagi, M. Alavi, R. Bigwood, T. Bramblett, J. Bradenburg, W. Chen, B. Crew, M. Hussein, P. Jacob, C. Kenyon, C. Lo, B. Mcintyre, Z. Ma, P. Moon, P. Nguyen, L. Rumaner, R. Schweinfurth, S. Sivakumar, M. Stettler, S. Thompson, B. Tufts, J. Xu, S. Yang, and M. Bohr, "A 130 nm Generation Logic Technology Featuring 70 nm Transistors, Dual Vt Transistors and 6 layers of Cu Interconnects," Intl. Elec. Devices Meeting, pp. 567-570, December 2000.
 
15

CITED BY  29

Collaborative Colleagues:
Siva Narendra: colleagues
Vivek De: colleagues
Dimitri Antoniadis: colleagues
Anantha Chandrakasan: colleagues
Shekhar Borkar: colleagues