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A system level memory power optimization technique using multiple supply and threshold voltages
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2001 Asia and South Pacific Design Automation Conference table of contents
Yokohama, Japan
Pages: 456 - 461  
Year of Publication: 2001
ISBN:0-7803-6634-4
Authors
Tohru Ishihara  VLSI Design and Education Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Kunihiro Asada  VLSI Design and Education Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
IPSJ : Information Processing Society of Japan
IEEE HK CAS : IEEE HK CAS and Comm. Joint Chapter
IEICE : Inst of Electronics, Info & Communication Engineers
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 3,   Downloads (12 Months): 14,   Citation Count: 8
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ABSTRACT

A system level approach for a memory power reduction is proposed in this paper. The basic idea is allocating frequently executed object codes into a small subprogram memory and optimizing supply voltage and threshold voltage of the subprogram memory. Since large scale memory contains a lot of direct paths from power supply to round, power dissipation caused by subthreshold leakage current is more serious than dynamic power dissipation. Our approach optimizes the size of subprogram memory, supply voltage, and threshold voltage so as to minimize memory power dissipation including static power dissipation caused by leakage current. A heuristic algorithm which determines code allocation, supply voltage, and threshold voltage simultaneously so as to minimize power dissipation of memories is proposed as well. Our experiments with some benchmark programs demonstrate significant energy reductions up to 80% over a program memory which does not employ our approach.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

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S.Mutoh S.Date,N.Shibata and J.Y mada.1- V,30-MHz Memory-Macrocell-Circuit Technology with 0.5 um Multi-threshold CMOS.In Proc. of IEEE Symposium on Low Power Electronics , pages 90 -91,1994.
 
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T.Hiramoto and M.T kamiya."Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias ".IEICE Trans. on Electronics ,E83 -C(2):161 -169,February 2000.
 
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M.Isobe,J.Matsunaga,T.Sakurai,T.Ohtani,K. Sawada,H.Nozawa,T.Iszuk and S.Kohyama. "A Low Power 46ns 256K bit CMOS Static RAM with Dynamic Double Word Line ".IEEE Journal of Solid State Circuits ,SC-19(5):578 -585,May 1984.
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CITED BY  8

Collaborative Colleagues:
Tohru Ishihara: colleagues
Kunihiro Asada: colleagues