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KSim: a stable and efficient RKC simulator for capturing on-chip inductance effect
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2001 Asia and South Pacific Design Automation Conference table of contents
Yokohama, Japan
Pages: 379 - 384  
Year of Publication: 2001
ISBN:0-7803-6634-4
Authors
Hao Ji  UC Santa Cruz CE Dept. Santa Cruz, CA
Anirudh Devgan  IBM Microelectronics Austin, TX
Wayne Dai  UC Santa Cruz CE Dept. Santa Cruz, CA
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
IPSJ : Information Processing Society of Japan
IEEE HK CAS : IEEE HK CAS and Comm. Joint Chapter
IEICE : Inst of Electronics, Info & Communication Engineers
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 2,   Downloads (12 Months): 8,   Citation Count: 14
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ABSTRACT

On-chip inductance extraction is difficult due to the global effect of inductance, and simulating the resulting dense partial inductance matrix is even more difficult. Furthermore, it is well known that simply discarding smallest terms to sparsify the inductance matrix can render the partial inductance matrix indefinite and result in an unstable circuit model. Recently a new circuit element, K , has been introduced to capture global effect of inductance by evaluating a corresponding sparse K matrix [1]. However, the reason that K has such local properties is not clear, and the positive semi-definiteness of the corresponding sparse K matrix is not proved. In this paper, we present the physical interpretation of K. Based on the physical interpretation, we explain why the faraway mutual K can be ignored (locality) and prove that after ignoring faraway mutual K ,the resultant K matrix is positive definite (stability). Together with a RKC equivalent circuit model, the locality and stability enables us to simulate RKC circuit directly and efficiently for real circuits. A new circuit simulation tool, KSim, has been developed by incorporating the new circuit element K into Berkeley SPICE. The RKC simulation matches better with the full partial inductance matrix simulation with significant less computing time and memory usage, compared to other proposed methods, such as shift-truncate method [2, 3].


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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4
E. B. Rosa, "The self and mutual inductance of linear conductors," in Bulletin of the National Bureau of Standars, pp. 301-344, 1908.
 
5
A. E. Ruehli, "Inductance calculations in a complex integrated circuit environment," IBM Journal of Research and Development, pp. 470-481, Sept. 1972.
 
6
A. E. Ruehli, "Equivalent circuit models for three dimensional multiconductor systems," IEEE Trans. on MTT, pp. 216-220, Mar. 1974.
 
7
K. L. Shepard and Z. Tian, "Return-limited inductances: A practical approach to on-chip inductance extraction," in Proc. IEEE Custom Integrated Circuits Conference, pp. 453-456, 1999.
 
8
D. D. Ling and A. E. Ruehli, Circuit Analysis, Simulation and Design-Advances in CAD for VLSI. Netherlands: Elsevier Science Publishers B.V., 1987.
 
9
M. Kamon, M. J. Tsuk, and J. K. White, "FASTHENRY: A multipole-accelerated 3-D inductance extraction program," IEEE Trans. on MTT, pp. 216-220, Sept. 1994.

CITED BY  14

Collaborative Colleagues:
Hao Ji: colleagues
Anirudh Devgan: colleagues
Wayne Dai: colleagues