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Analysis and optimization of thermal issues in high-performance VLSI
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Source International Symposium on Physical Design archive
Proceedings of the 2001 international symposium on Physical design table of contents
Sonoma, California, United States
Pages: 230 - 237  
Year of Publication: 2001
ISBN:1-58113-347-2
Authors
Kaustav Banerjee  Center for Integrated Systems, Stanford University, Stanford, CA
Massoud Pedram  Department of Electrical Engineering-Systems, University of Southern California, Los Angeles, CA
Amir H. Ajami  Department of Electrical Engineering-Systems, University of Southern California, Los Angeles, CA
Sponsor
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 17,   Downloads (12 Months): 71,   Citation Count: 11
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ABSTRACT

This paper provides an overview of various thermal issues in high-performance VLSI with especial attention to their implications for performance and reliability. More specifically, it examines the impact of thermal effects on both interconnect design and electromigration reliability and discusses their impact on the allowable current density limits. Furthermore, it also discusses how thermal and reliability constrained current density limits may conflict with those obtained through purely performance based criterion. Additionally, it is shown that chip level thermal effects can have a significant impact on large-scale circuit optimization techniques, including the clock-skew minimization scheme, and can influence other physical design problem formulations. Finally, high-current interconnect design rules for ESD and I/O circuits are also examined.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
 
2
International Technology Roadmap for Semiconductors- ITRS, 1999.
 
3
S. Im and K. Banerjee, "Full chip thermal analysis of planar (2-D) and vertically integrated (3-D) high performance ICs," Tech. Dig. IEDM, 2000, pp. 727-730.
 
4
K. Banerjee, "Thermal effects in deep sub-micron VLSI interconnects," Tutorial Notes, IEEE International Symposium on Quality Electronic Design, 2000.
 
5
J. R. Black, "Electromigration - A brief survey and some recent results," IEEE Trans. Electron Devices, vol. ED-16, pp. 338-347, 1969.
 
6
B. K. Liew, N. W. Cheung, and C. Hu, "Projecting interconnect electromigration lifetime for arbitrary current waveforms," IEEE Trans. Electron Devices, vol. 37, pp. 1343-50, 1990.
 
7
K. Banerjee, A. Amerasekera, N. Cheung, and C. Hu, "High-current failure model for VLSI interconnects under short-pulse stress conditions," IEEE Electron Device Lett., vol. 18, No. 9, pp. 405-407, 1997.
 
8
K. Banerjee, D. Y. Kim, A. Amerasekera, C. Hu, S. S. Wong, and K. E. Goodson, "Microanalysis of VLSI interconnect failure modes under short-pulse stress conditions," IRPS, 2000, pp. 283-288.
 
9
J. Ida et al., "Reduction of wiring capacitance with new low dielectric SiOF interlayer film for high speed/low power sub-half micron CMOS," Tech. Dig. VLSI Symp., 1994, pp. 59-60.
 
10
MRS Bulletin, October 1997.
 
11
B. Shieh, K. C. Saraswat, J.P. McVittie, S. List, S. Nag, M. Islamraja, and R.H. Havemann, "Air-Gap formation during ILD deposition to lower interconnect capacitance," IEEE Electron Device Lett., vol. 19, no. 1, pp. 16-18, 1998.
 
12
K. Banerjee, A. Amerasekera, G. Dixit, and C. Hu, "The effect of interconnect scaling and low-k dielectric on the thermal characteristics of the IC metal," Tech. Dig. IEDM, 1996, pp. 65-68.
13
14
 
15
K. Banerjee, A. Mehrotra, W. Hunter, K. C. Saraswat, K. E. Goodson, and S. S. Wong, "Quantitative projections of reliability and performance for low-k/Cu interconnect systems," IRPS, 2000, pp. 354-358.
 
16
 
17
H.A. Schafft, "Thermal Analysis of Electromigration Test Structures," IEEE Trans. on Electron Device, vol.Ed-34, No.3, pp.664-672, 1987.
 
18
W. R. Hunter, "Self-consistent solutions for allowed interconnect current density - Part I: Implications for technology evolution," IEEE Trans. Electron Devices, vol. ED-44, pp. 304-309, 1997.
 
19
W. R. Hunter, "Self-consistent solutions for allowed interconnect current density - Part II: Application to design guidelines," IEEE Trans. Electron Devices, vol. ED-44, pp. 310-316, 1997.
 
20
K. E. Goodson and Y. S. Ju, "Heat conduction in novel electronic films," Annu. Rev. Mater. Sci., 29: pp. 261-293, 1999.
21
 
22
"Physical design modeling and verification project (SPACE)," http://cas.et.tudelft.nl/research/space.html
 
23
W.C. Elmore, "The Transient Response of Damped Linear Network with Particular Regard to Wide-Band Amplifier," Journal of Applied Physics, vol.19, pp.52-63, 1948.
24
25
 
26
T.H. Chao, Y.C. Hsu, J.M. Ho, K.D. Boese, A.B. Kahng, "Zero skew clock routing with minimum wirelength," IEEE Transaction on Circuits and Systems-II, vol. 39, No. 11, pp. 799-814, 1992.
 
27
P. Zarkesh-Ha, T. Mule, J.D. Meindl, "Characterization and modeling of clock skew with process variation," Proc. Custom Integrated Circuits Conf., 1999, pp. 441-444.
 
28
A.H. Ajami, M. Pedram, K. Banerjee, "Effects of non-uniform substrate temperature on the clock signal integrity in high performance designs," to appear in Proc. IEEE Custom Integrated Circuits Conf., 2001.
 
29
A.H. Ajami, K. Banerjee, and M. Pedram, "Non-uniform chiptemperature dependent signal integrity," to appear in Symposium on VLSI Technology., 2001.
 
30
C. Duvvury and A. Amerasekera, "ESD: A pervasive reliability concern for IC technologies," Proc. of the IEEE, Vol. 81, No. 5, pp. 690-702, 1993.
 
31
C. Duvvury and A. Amerasekera, "State-of-the-art issues for technology and circuit design of ESD protection in CMOS ICs," Semiconductor Science. and Tech., pp. 833-850, 1996.
 
32
S. H. Voldman, "ESD robustness and scaling implications of aluminum and copper interconnects in advanced semiconductor technology," Proc. EOS/ESD Symposium, 1997, pp. 316-329.
 
33
T-Y Chiang, K. Banerjee, K. C. Saraswat, "Effect of via separation and low-k dielectric materials on the thermal characteristics of Cu interconnects," Tech. Dig. IEDM, 2000, pp. 261-264.

CITED BY  11

Collaborative Colleagues:
Kaustav Banerjee: colleagues
Massoud Pedram: colleagues
Amir H. Ajami: colleagues