| Voltage dependent gate capacitance and its impact in estimating power and delay of CMOS digital circuits with low supply voltage (poster session) |
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International Symposium on Low Power Electronics and Design
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Proceedings of the 2000 international symposium on Low power electronics and design
table of contents
Rapallo, Italy
Pages: 228 - 230
Year of Publication: 2000
ISBN:1-58113-190-9
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Authors
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Koichi Nose
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Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558 Japan
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Soo-Ik Chae
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School of EE, Seoul National University, Rm.804, Bldg.301, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742 Korea
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Takayasu Sakurai
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Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558 Japan
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Downloads (6 Weeks): 14, Downloads (12 Months): 29, Citation Count: 2
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ABSTRACT
Gate capacitance has complex voltage dependency on terminal voltages but the impact of this voltage dependency of gate capacitance on power and delay has not been fully investigated, especially, in low-voltage, low-power designs. Introducing an effective gate capacitance, CG, effit is shown that the power and delay of CMOS digital circuit can be estimated accurately. CG, effis a strong function of VTH/VDDand VTH/VDDtends to increase in low-voltage region. Hence, the effective capacitance (relative to oxide capacitance, CG, eff, is decreasing in low-voltage low-power designs. Therefore, considering CG, effin accurate power and delay) estimation becomes more important in the future.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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K. Nose and T. Sakurai, "Closed-Form Expressions for Short- Circuit Power of Short-Channel CMOS Gates and Its Scaling Characteristics," Proc. of International Technical Conference on Circuit~Systems, Computers and Communication, pp.1741- 1744, July, 1998.
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T.Sakurai and A.R.Newton, "Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas," IEEE J. Solid-State Circuits, vol.25, no.2, pp.584- 594, Apr., 1990.
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