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Voltage dependent gate capacitance and its impact in estimating power and delay of CMOS digital circuits with low supply voltage (poster session)
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Source International Symposium on Low Power Electronics and Design archive
Proceedings of the 2000 international symposium on Low power electronics and design table of contents
Rapallo, Italy
Pages: 228 - 230  
Year of Publication: 2000
ISBN:1-58113-190-9
Authors
Koichi Nose  Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558 Japan
Soo-Ik Chae  School of EE, Seoul National University, Rm.804, Bldg.301, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742 Korea
Takayasu Sakurai  Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558 Japan
Sponsors
IEEE-CAS : Circuits & Systems
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

Gate capacitance has complex voltage dependency on terminal voltages but the impact of this voltage dependency of gate capacitance on power and delay has not been fully investigated, especially, in low-voltage, low-power designs. Introducing an effective gate capacitance, CG, effit is shown that the power and delay of CMOS digital circuit can be estimated accurately. CG, effis a strong function of VTH/VDDand VTH/VDDtends to increase in low-voltage region. Hence, the effective capacitance (relative to oxide capacitance, CG, eff, is decreasing in low-voltage low-power designs. Therefore, considering CG, effin accurate power and delay) estimation becomes more important in the future.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
P.Yang, B.D.Epler and P.K.Chatterjee, "An investigation of the charge conservation problem for MOSFET circuit simulation," IEEE J. Solid-State Circuits, vol. SC-18, no.l, pp.128-138, Feb., 1983.
 
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4
K. Nose and T. Sakurai, "Closed-Form Expressions for Short- Circuit Power of Short-Channel CMOS Gates and Its Scaling Characteristics," Proc. of International Technical Conference on Circuit~Systems, Computers and Communication, pp.1741- 1744, July, 1998.
 
5
T.Sakurai and A.R.Newton, "Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas," IEEE J. Solid-State Circuits, vol.25, no.2, pp.584- 594, Apr., 1990.
 
6
The National Technology Roadmap for Semi- conductors, SIA Handbook, 1998


Collaborative Colleagues:
Koichi Nose: colleagues
Soo-Ik Chae: colleagues
Takayasu Sakurai: colleagues