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Memory access scheduling
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Source International Symposium on Computer Architecture archive
Proceedings of the 27th annual international symposium on Computer architecture table of contents
Vancouver, British Columbia, Canada
Pages: 128 - 138  
Year of Publication: 2000
ISBN:1-58113-232-8
Also published in ...
Authors
Scott Rixner  Electrical Engineering, Massachusetts Institute of Technology and Computer Systems Laboratory, Stanford University, Stanford, CA
William J. Dally  Computer Systems Laboratory, Stanford University, Stanford, CA
Ujval J. Kapasi  Computer Systems Laboratory, Stanford University, Stanford, CA
Peter Mattson  Computer Systems Laboratory, Stanford University, Stanford, CA
John D. Owens  Computer Systems Laboratory, Stanford University, Stanford, CA
Sponsor
SIGARCH: ACM Special Interest Group on Computer Architecture
Publisher
ACM  New York, NY, USA
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ABSTRACT

The bandwidth and latency of a memory system are strongly dependent on the manner in which accesses interact with the “3-D” structure of banks, rows, and columns characteristic of contemporary DRAM chips. There is nearly an order of magnitude difference in bandwidth between successive references to different columns within a row and different rows within a bank. This paper introduces memory access scheduling, a technique that improves the performance of a memory system by reordering memory references to exploit locality within the 3-D memory structure. Conservative reordering, in which the first ready reference in a sequence is performed, improves bandwidth by 40% for traces from five media benchmarks. Aggressive reordering, in which operations are scheduled to optimize memory bandwidth, improves bandwidth by 93% for the same set of applications. Memory access scheduling is particularly important for media processors where it enables the processor to make the most efficient use of scarce memory bandwidth.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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NEC Corporation. 128M-bit Synchronous DRAM 4-bank, LVTTL Data Sheet. Document No. M12650EJ5VODS00, 5th Edition, Revision K (July 1998).
 
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WATANABE, TAKEO, ET AL., Access Optimizer to Overcome the "Future Walls of Embedded DRAMs" in the Era of Systems on Silicon. In IEEE International Solid-State Circuits Conference Digest of Technical Papers (February 1999), pp. 370- 371.

CITED BY  53

Collaborative Colleagues:
Scott Rixner: colleagues
William J. Dally: colleagues
Ujval J. Kapasi: colleagues
Peter Mattson: colleagues
John D. Owens: colleagues