Memory Matrix Using Ferroelectric Condensers as Bistable Elements

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Memory Matrix Using Ferroelectric Condensers as Bistable Elements

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Journal of the ACM (JACM) archive
Volume 2 , Issue 3 (July 1955) table of contents

Pages: 169 - 185

Year of Publication: 1955

ISSN:0004-5411

Author

Charles F. Pulvari

The Catholic University of America, Washington, D.C.

Publisher

ACM New York, NY, USA

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REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

	1	Helen D. Megaw, Origin of Ferroelectrieity in Barium Titanate and Other Perovskite-Type Crystals. Acta Cryat, 1952, pp. 5, 739.
	2	Walter T. Merz, Double Hysteresis Loop of BaTiO 3 at the Curie Point," The Physical Review, VoL 91, No, 3, pp. 513-517, August 1, 1953
	3	Charles F. Pulvari, Air Force Progress Report No. 6, Air Force Contract Noo 18(600)-106 E.O.R.-468, April 1953.
	4	Charles F. Pulvari, The snapping dipoles of ferroelectrics as a memory element for digital computers, Proceedings of the February 4-6, 1953, western computer conference, p.140-159, February 01-06, 1953, Los Angeles, California [doi>10.1145/1434821.1434836]
	5	Jay W. Forrester, "Digital Information Storage in Three Dimensions Using Magnetic Cores." Journal of Applied Physics, VoL 22, Jan. 1951.
	6	William N. Papian, aCoincident Current Magnetic Memory Unit." Master of Science Thesis, M.I.T., Electrical Engineering Department, 1950.
	7	Jan A. Rajchmanp aStatic Magnetic Memory and Switching Circuits." RCA Review,. June 1952.
	8	Charles F. Pulvari, Air Force Progress Report No. 4, Air Force Contract No. 33(038)15977, George Washington University, Oct. 1950-Oct. 1951.
	9	J.R. Anderson, "Ferroelectric Material Storage Element for Digital Computers and Switching Systems." Electrical Engineering, Vol. 71, pp. 916-922, October, 1952.