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A high speed and low power SOL inverter using active body-bias
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Source International Symposium on Low Power Electronics and Design archive
Proceedings of the 1998 international symposium on Low power electronics and design table of contents
Monterey, California, United States
Pages: 59 - 63  
Year of Publication: 1998
ISBN:1-58113-059-7
Authors
Joonho Gil  Department of Electrical Eng., KAIST, 373-1 Kusong-Dong, Yusong-Gu, Taejon, 305-701, KOREA
Minkyu Je  Department of Electrical Eng., KAIST, 373-1 Kusong-Dong, Yusong-Gu, Taejon, 305-701, KOREA
Jongho Lee  School of Electrical Eng., Wonkwang University, 344-2 Shinyong-Dong, Iksan, Chonpuk, 570-749, KOREA
Hyungcheol Shin  Department of Electrical Eng., KAIST, 373-1 Kusong-Dong, Yusong-Gu, Taejon, 305-701, KOREA
Sponsors
IEEE-SSCS : Solid Stat Circuits Council
SIGDA: ACM Special Interest Group on Design Automation
IEEE-EDS : Electronic Devices Society
IEEE-CAS : Circuits & Systems
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 4,   Downloads (12 Months): 19,   Citation Count: 2
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ABSTRACT

We propose a new high speed and low power SOI inverter that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5V, the proposed circuit operates 27% faster than the conventional SOI circuit with the same power dissipation.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
F. Assaderagi, et. al., "A dynamic threshold voltage MOSFET(DTMOS) for ultra-low voltage operation," IEEE Trans. Electron Devices, vol. 44, no. 3, pp. 414- 422, Mar. 1997.
 
2
I-Y. Chung, Y-J. Park, and H-S. Min, "A new SOl inverter using dynamic threshold for low power applications," IEEE Electron Device Letters, vol. 18, no. 6, pp. 248-250, June 1997.
 
3
Y. Wada, K. Ueda, T. Hirota, and Y. Hirano, "Active body-bias SOI-CMOS driver circuits," 1997 Symposium on VLSI Circuits Digest of Tech. Papers, pp. 29-30, 1997.
 
4
Jongho Lee and Y-J. Park, "High speed SOl buffer circuit with the efficient connection of subsidiary MOSFET's for dynamic threshold control," Proceedings 1997 IEEE International SO1 Conference, pp. 152-153, Oct. 1997.
 
5
H. C. Shin et. al., "Analysis of floating body induced transient behaviors in partially depleted thin film SOl devices," IEEE Trans. Electron Devices, vol. 43, no. 2, pp. 318-325, Feb. 1996.
 
6
C. Wann, F. Assaderagi, R. Dennard, C. Hu, G. Shahidi, and Y. Taur, "Channel profile optimization and device design for low-power high performance dynamic threshold MOSFET," 1996 IEDM Tech. Digest, pp.113-116, 1996.
 
7
B. Agrawal, V. K. De, and J. D. Meindl, "Device parameter optimization for reduced short channel effects in retrograde doping MOSFET," IEEE Trans. Electron Devices, vol. 43, no. 2, pp. 365-368, Feb. 1996.
 
8
S. Fung et. al., BSIM3SOI vl.O Manual, Department of EECS, UC Berkeley, 1997.
 
9
Silvaco International, ATLAS User's Manual, Version 1.5.0, April 1997.


Collaborative Colleagues:
Joonho Gil: colleagues
Minkyu Je: colleagues
Jongho Lee: colleagues
Hyungcheol Shin: colleagues