A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 &mgr;m silicon bipolar production technology

ABSTRACT

This paper presents a dual-modulus ÷128÷129 prescaler operating up to 2.5 GHz. It consumes only 3.8 mW from a 2.3 V supply when driving an 8 pF capacitive load. The circuit is operational with supplies ranging from 2 V to over 7 V. With a 2 V supply it consumes only 1.38 mA while still operating up to 2 GHz. The circuit is manufactured in a standard silicon bipolar production process (Siemens B6HF). This 25 GHz-fT double-polysilicon technology uses 0.8 µm lithography and LOCOS isolation. The chip is mounted in a 6-pin SOT363 SMD package.

REFERENCES

• 1: B6ck, J., Felder, A., Meister, T., Franosch, M., Aufinger, K., Wurzer, M., Schreiter, R., Boguth, S., and Treitinger, L. A 50 GHz Implanted Base Silicon Bipolar Technology with 35 GHz Static Frequency Divider. Symposium on VLSI Technology Digest of Technical Papers (June 1996), 108- 109.
• 2: Cong, H.-I., Andrews, J. M., Boulin, D. M., Fang, S.-C., Hillenius, S. J., and Michejda, J. A. Multigigahertz CMOS Dual-Modulus Prescalar IC. IEEE Journal of Solid State Circuits 23, 5 (Oct. 1988), I 189-1194.
• 3: Craninckx, J., and Steyaert, M. A 1.75-GHz/3-V Dual Modulus Divide-by-128/129 Prescaler in 0.7-~m CMOS. IEEE Journal of Solid State Circuits 31, 7 (Jul. 1996), 890- 897.
• 4: Kado, Y., Suzuki, M., Koike, K., Omura, Y., and Izumi, K. A I-GHz/0.9-mW CMOS/SIMOX Divide-by-128/129 Dual- Modulus Prescaler Using a Divide-by-2/3 Synchronous Counter. IEEE Journal of Solid State Circuits 28, 4 (Apr. 1993), 513-517.
• 5: Klose, H., Lachner, R., Sch6n, K., Mahnkopf, R., Malek, K., Kerber, M., Braun, H., v.Felde, A., Popp, J., Cohrs, O., Bertagnolli, E., and Sehrig, P. B6HF: A 0.8 Micron 25GHz/25ps Bipolar Technology for "Mobile Radio" and "Ultra Fast Data Link" IC-Products. IEEE Bipolar Circuits and Technology Meeting 1993, 125-127.
• 6: Meister, T., Sch~ifer, H., Franosch, M., Molzer, W., Aufinger, K., Scheler, U., Walz, C., Stolz, M., Boguth, S., and B6ck, J. SiGe Base Bipolar Technology with 74 GHz fm~x and 11 ps Gate Delay. IEDM Technical Digest 1995, 739-742.
• 7: Mizuno, M., Suzuki, H., Ogawa, M., Sato, K., and lchikawa, H. A 3-mW 1.0-GHz Silicon-ECL Dual Modulus Prescaler IC. IEEE Journal of Solid State Circuits 27, 12 (Dec. 1992), 1794-1798.
• 8: Seneff, T., McKay, L., Sakamoto, K., and Tracht, N. A Sub-I mA 1.5-GHz Silicon Bipolar Dual Modulus Prescaler. IEEE Journal of Solid State Circuits 29, 10 (Oct. 1994), 1206-1211.

INDEX TERMS

Primary Classification:
  B. Hardware
  B.7 INTEGRATED CIRCUITS
      B.7.1 Types and Design Styles
          Subjects: Advanced technologies

Additional Classification:
  B. Hardware
  B.8 Performance and Reliability

  J. Computer Applications
  J.2 PHYSICAL SCIENCES AND ENGINEERING
      Subjects: Electronics

General Terms:
Design, Experimentation, Measurement, Performance, Theory