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A practical approach to static signal electromigration analysis
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 35th annual Design Automation Conference table of contents
San Francisco, California, United States
Pages: 572 - 577  
Year of Publication: 1998
ISBN:0-89791-964-5
Authors
Nagaraj NS  Texas Instruments, Inc., 8505 Forest Ln, MS 8635, Dallas, TX
Frank Cano  Texas Instruments, Inc., P.O. Box 1443, MS 714, Houston, TX
Haldun Haznedar  Texas Instruments, Inc., P.O. Box 1443, MS 714, Houston, TX
Duane Young  Texas Instruments, Inc., P.O. Box 1443, MS 714, Houston, TX
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
EDAC : Electronic Design Automation Consortium
IEEE-CS : Computer Society
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 5,   Downloads (12 Months): 28,   Citation Count: 5
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ABSTRACT

It is commonly thought that sweep-back effects would make electromigration (EM) a non-issue in signal lines. However this is only the case when the shape of the positive and negative current pulses are closely matched. Moreover, as performance pressures increase, the peak current values are exceeding the range for which electromigration models are valid. Thus, during the design of TI's TMS320c6201 DSP chip, it was determined that limits needed to be placed on the current densities in signal-line segments, and that every net in the design should be checked. Dynamic current density analysis on all nets of a large design is computationally very expensive. In this paper, we describe a practical CAD methodology for a static, signal electromigration analysis for large cell-based designs. We present results and some observations from application of this methodology on the TMS320c6201.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
Black, J. R. "Electromigration Failure Modes in Aluminum Metallization for Semiconductor Devices." Proceedings of IEEE, 57, p. 1587, 1969.
 
2
Maiz, J.A. "Characterization of Electromigration under Bidirectional (BX) and Pulsed Unidirectional (PDC) Currents," in Proceedings of 27th Annual International Reliability Physics Symposium, IEEE,.1989, pp,220-228.
 
3
Murguia, J. E., and Brenstien, J. B., "Short-Time Failure of Metal Interconnect Caused by Current Pulses," IEEE Electron Device Letters, p. 48 1-483 ,1993
 
4
Nagaraj NS, "Approximate computation of signal characteristics of on-chip interconnect." Proc. of ISCAS 1994
 
5
O'Brien, P., "Modeling of Driving Point Characteristics of Resistive Interconnect for accurate delay estimation.," Proc. of ICCAD 1991, pp 5 12-515
 
6
Ratzlaff, C, L., and Pillage, L. "RICE: Rapid Interconnect Circuit Evaluation Using AWE," IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems. Vol. 13. No. 6.1994.
 
7
Scarpulla, et al. "Reliability of Metal Interconnect After a High Current Pulse," Electron Device Letters, 1996
 
8
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association (SIA), 1997
 
9
"Design Needs for the 21st Century: White Paper," Semiconductor Research Center (SRC), September, 1994
 
10
Ting, L, May, J.S., Hunter, W.R., and McPherson, J.W., "AC Electromigration Characterization and Modeling of Multilayered Interconnections," Proceedings of IRPS, pp. 311-316 1993.


Collaborative Colleagues:
Nagaraj NS: colleagues
Frank Cano: colleagues
Haldun Haznedar: colleagues
Duane Young: colleagues