|
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
| |
1
|
Agnello, P., Newman, T., Crabbe, E., Subbanna, S., Ganin, E., Liebmann, L., Comfort, J., and Sunderland, D. Phase edge lithography for sub-0.1 btm electrical channel length in a 200mm full CMOS process. In Tech. Dig. of the Symposium on VLSI Technology (Kyoto, June 6-8, 1995), IEEE Press, Piscataway, N.J., pp. 79-80.
|
| |
2
|
Asai, S., and Wada, Y. Technology challenges for integration near and below 0.1btm. Proc. IEEE 85, 4 (April 1997), 505-520.
|
| |
3
|
Bohr, M. Interconnect scaling--The real limiter to high-performance ULSI. In Tech. Dig. of the International Electron Devices Meeting (Washington, D.C., Dec. 10-13, 1995), IEEE Press, Piscataway, N.J., pp. 241-244.
|
| |
4
|
Bohr, M., Ahmed, S., Brigham, L., Chau, R., Gasser, R., Green, R., Hargrove, W., Lee, E., Natter, R., Thompson, S., Weldon, K., and Yang, S. A high-performance 0.35btm logic technology for 3.3V and 2.5V operation. In Tech. Dig. of the International Electron Devices Meeting (San Francisco, Dec. 11-14, 1994), IEEE Press, Piscataway, N.J., pp. 273-276.
|
| |
5
|
Bohr, M., Ahmed, S., Ahmed, S., Bost, M., Ghani, T., Greason, J., Hainsey, R., Jan, C., Packan, P., Sivakumar, S., Thompson, S., Tsai, J., and Yang, S. A high-performance 0.25 btm logic technology optimized for 1.8V operation. In Tech. Dig. of the International Electron Devices Meeting (San Francisco, Dec. 8-11, 1996), IEEE Press, Piscataway, N.J., pp. 847-850.
|
| |
6
|
Dennard, R., Gaensslen, F., Yu, H., Rideout, V., Bassous, E., and LeBlanc, A. Design of ion-implanted MOSFETs with very small physical dimensions. IEEE ft. Solid State Circuits SC-9, 5 (Oct. 1974), 256-268.
|
| |
7
|
Taur, Y., Buchanan, D., Chen, W., Frank, D., Ismail, K., Lo, S., Sai- Halasz, G., Viswanathan, R., Wann, H., Wind, S., and Wong, H,. CMOS scaling into the nanometer range. Proc. IEEE 85, 4 (April 1997), 486-504.
|
|