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Power supply noise analysis methodology for deep-submicron VLSI chip design
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 34th annual Design Automation Conference table of contents
Anaheim, California, United States
Pages: 638 - 643  
Year of Publication: 1997
ISBN:0-89791-920-3
Authors
Howard H. Chen  IBM Research Division Thomas J. Watson Research Center Yorktown Heights, NY
David D. Ling  IBM Research Division Thomas J. Watson Research Center Yorktown Heights, NY
Sponsors
EDAC : Electronic Design Automation Consortium
IEEE-CAS : Circuits & Systems
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 36,   Downloads (12 Months): 146,   Citation Count: 75
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ABSTRACT

This paper describes a new design methodology to analyzethe on-chip power supply noise for high-performance microprocessors.Based on an integrated package-level andchip-level power bus model, and a simulated switching circuitmodel for each functional block, this methodology offersthe most complete and accurate analysis of Vdd distributionfor the entire chip. The analysis results not only providedesigners with the inductive ¿I noise and the resistive IRdrop data at the same time, but also allow designers to easilyidentify the hot spots on the chip and ¿V across the chip.Global and local optimization such as buffer sizing, powerbus sizing, and on-chip decoupling capacitor placement canthen be conducted to maximize the circuit performance andminimize the noise.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
H. Bakoglu, Circuits, Interconnections, and Packaging for VLSI. Addison-Wesley, 1990.
 
2
W. Bowhill et al., "A 300 MHz 64b quad-issue CMOS RISC microprocessor," in Proc. International Solid-State Circuits Conference, pp. 182-183, February 1995.
 
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L. Miller, "Controlled collapse reflow chip joining," IBM Journal of Research and Development, vol. 13, no. 3, pp. 239-250, 1969.
 
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5
B. Davari et al., "A high performance 0.25urn CMOS technology," in Proc. International Electron Devices Meeting, pp. 56-59, December 1988.
 
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D. Dobberpuhl et al., "A 200-MHz 64-bit dual-issue CMOS microprocessor," IEEE Journal of Solid-State Circuits, pp. 1555-1567, November 1992.
 
7
J. Seliskar et al., "Voltage limitation of 0.5urn CMOS on thin SOI," in Proc. International Symposium on Siliconon-Insulator Technology and Devices, pp. 118-119, May 1992.
 
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A. Acovic et al., "Hot carrier reliability of fully depleted accumulation mode SOI MOSFETs," in Proc. IEEE International SO1 Conference, pp. 134-135, October 1992.
 
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F. Assaderaghi et al., "A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation," in Proc. International Electron Devices Meeting, pp. 809- 812, December 1994.

CITED BY  75

Collaborative Colleagues:
Howard H. Chen: colleagues
David D. Ling: colleagues