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Transistor sizing issues and tool for multi-threshold CMOS technology
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 34th annual Design Automation Conference table of contents
Anaheim, California, United States
Pages: 409 - 414  
Year of Publication: 1997
ISBN:0-89791-920-3
Authors
James Kao  Department of EECS, Massachusetts Institute of Technology, Cambridge
Anantha Chandrakasan  Department of EECS, Massachusetts Institute of Technology, Cambridge
Dimitri Antoniadis  Department of EECS, Massachusetts Institute of Technology, Cambridge
Sponsors
EDAC : Electronic Design Automation Consortium
IEEE-CAS : Circuits & Systems
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 18,   Downloads (12 Months): 72,   Citation Count: 42
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ABSTRACT

Multi-threshold CMOS is an increasingly popular circuitapproach that enables high performance and low power operation.However, no methodologies have been developed to size the highV{t} sleep transistor in an intelligent manner that trades off area andperformance. In fact, many attempts at sizing the sleep transistorwithout close consideration of input vector patterns or internalstructures can lead to large overestimates or large underestimatesin sleep transistor sizing. This paper describes some of the issuesinvolved in sizing transistors for MTCMOS and also introduces avariable breakpoint switch level simulator that can rapidly calculatedelay in MTCMOS circuits as functions of design variablessuch as V{dd}, V{t}, and sleep transistor sizing.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
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2
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3
 
4
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5
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10
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CITED BY  42

Collaborative Colleagues:
James Kao: colleagues
Anantha Chandrakasan: colleagues
Dimitri Antoniadis: colleagues