| Device design for low power electronics with accurate deep submicrometer LDD-MOSFET models |
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International Symposium on Low Power Electronics and Design
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Proceedings of the 1996 international symposium on Low power electronics and design
table of contents
Monterey, California, United States
Pages: 197 - 200
Year of Publication: 1996
ISBN:0-7803-3571-6
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Authors
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K. Chen
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211-72 Cory Hall, EECS Department, University of California, Berkeley, CA
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Y. Cheng
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211-72 Cory Hall, EECS Department, University of California, Berkeley, CA
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C. Hu
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211-72 Cory Hall, EECS Department, University of California, Berkeley, CA
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IEEE Press
Piscataway, NJ, USA
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Downloads (6 Weeks): 5, Downloads (12 Months): 13, Citation Count: 0
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REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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1
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Kai Chert, = al, "MOSFET Cmrier Mobility Model Based on Gate Oxide Thicknms, ~old and Gate Voltages", to appear on Journal of Solid-State Electronics, Vol. 39, 1996.
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Kai Chert, et al, "An Acctmtte Semi-Empirical Saturation Drain Current Model for LDD N-MOSFEF", IEEE Electron Device Letters, vol. 17, No. 3, pp. 145-147, March 1996.
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3
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Kai Chert, et al, "The Impact of ~ Scaling and Power Supply Change on CMOS Gate Performance", IEEE Electron Device Letters, vol. 17, No. 5, pp. 202-204, May 1996.
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C. Hu, "Device and Technology Impact on Low Power Electronics", Chapter 2 of "Low PUwex Design Methodologies", Kluwer Academic Publishers, 1996.
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Kai Chen, et al, "Univezsal MOSFZI' Carrier Mobility Model Explicitly Based on V,, Vs and T= and Its Applic~on in ~ Modeling and Optimization", Proceedings of 1995 International 5en6conductor Device Research Symposium (15DR5'95), pp. 607-610, ~ber 1995.
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Yuhua Cheng, et al, "BSIM3v3 Manual", Department of Electrical Engineering and Computer Science, University of California at Berkeley, October, 1995.
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