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Fast and accurate timing simulation with regionwise quadratic models of MOS I-V characteristics
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Source International Conference on Computer Aided Design archive
Proceedings of the 1994 IEEE/ACM international conference on Computer-aided design table of contents
San Jose, California, United States
Pages: 190 - 194  
Year of Publication: 1994
ISBN:0-89791-690-5
Authors
A. Dharchoudhury  Dept. of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL
S. M. Kang  Dept. of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL
K. H. Kim  CAE Department, Samsung Electronics Co., Seoul, S. Korea
S. H. Lee  CAE Department, Samsung Electronics Co., Seoul, S. Korea
Sponsors
IEEE-CS : Computer Society
SIGDA: ACM Special Interest Group on Design Automation
Publisher
IEEE Computer Society Press  Los Alamitos, CA, USA
Bibliometrics
Downloads (6 Weeks): 0,   Downloads (12 Months): 7,   Citation Count: 8
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ABSTRACT

This paper presents a technique called regionwise quadratic (RWQ) modeling that allows highly accurate MOS models, as well as measured I-V data, to be used in fast timing simulation. This technique significantly increases the accuracy of fast timing simulation while maintaining efficiency by permitting analytical solutions of node equations. A fast timing simulator using these RWQ models has been implemented. Several examples of RWQ modeling are provided, and comparisons of simulation results with SPICE3 are shown to demonstrate accuracy and efficiency. Speedups of two to three orders of magnitude for circuits containing up to 2000 transistors are observed.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Y.-H. Shih, Y. Leblebici, and S. M. Kang, "ILLI- ADS: A fast timing and reliability simulator for digital MOS circuits," IEEE Trans. Computer-Aided Design, vol. 12(9), pp. 1387-1402, Sept. 1993.
 
3
Y. H. Shih and S. M. Kang, "Analytic transient solution of general MOS circuit primitives," IEEE Trans. Computer-Aided Design, vol. 11(6), pp. 719-731, June 1992.
 
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W. T. Cheng and S. Davidson, "Sequential circuit test generator (STG) benchmark results," Proc. IEEE Int. Syrup. on Circuits and Systems, pp. 1938-1941, May 1989.

CITED BY  8

Collaborative Colleagues:
A. Dharchoudhury: colleagues
S. M. Kang: colleague listing is not available.
K. H. Kim: colleagues
S. H. Lee: colleagues