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ABSTRACT
The use of NAND flash memory for building permanent storage has been increasing in many embedded systems due to properties such as non-volatility and low energy consumption. The persistent requirements for high storage capacity have given rise to the increase of bit density per cell as in multi-level cells but this has come at the expense of performance and has resulted in degradation of durability. In this paper, we introduce a complementary approach to boost the performance and durability of MLC-based storage systems by employing a non-volatile buffer that temporarily holds the data heading to MLCs. We also propose algorithms to efficiently eliminate unnecessary write and erase operations in MLCs by performing a pre-merge in the buffer. Our experiments show that the proposed approach can increase performance by up to 4 times and durability by 4 times by adding only a small hardware cost.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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