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Statistical reliability analysis under process variation and aging effects
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 46th Annual Design Automation Conference table of contents
San Francisco, California
SESSION: Novel techniques to minimize circuit failure table of contents
Pages 514-519  
Year of Publication: 2009
ISBN:978-1-60558-497-3
Authors
Yinghai Lu  Fudan University, China
Li Shang  University of Colorado, Boulder
Hai Zhou  Fudan University, China and Northwestern University
Hengliang Zhu  Fudan University, China
Fan Yang  Fudan University, China
Xuan Zeng  Fudan University, China
Sponsors
EDAC : Electronic Design Automation Consortium
SIGDA: ACM Special Interest Group on Design Automation
IEEE-CAS : Circuits & Systems
Publisher
ACM  New York, NY, USA
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ABSTRACT

Circuit reliability is affected by various fabrication-time and run-time effects. Fabrication-induced process variation has significant impact on circuit performance and reliability. Various aging effects, such as negative bias temperature instability, cause continuous performance and reliability degradation during circuit run-time usage. In this work, we present a statistical analysis framework that characterizes the lifetime reliability of nanometer-scale integrated circuits by jointly considering the impact of fabrication-induced process variation and run-time aging effects. More specifically, our work focuses on characterizing circuit threshold voltage lifetime variation and its impact on circuit timing due to process variation and the negative bias temperature instability effect, a primary aging effect in nanometer-scale integrated circuits. The proposed work is capable of characterizing the overall circuit lifetime reliability, as well as efficiently quantifying the vulnerabilities of individual circuit elements. This analysis framework has been carefully validated and integrated into an iterative design flow for circuit lifetime reliability analysis and optimization.


REFERENCES

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