Device/circuit interactions at 22nm technology node

ABSTRACT

As transition is being made into 22nm node, technology considerations and device architectures suitable for such scaled technologies are being explored. To design circuits and systems at scaled nodes, we believe there is a need for technology aware circuit and system design methodology that considers device architecture, and technology challenges to achieve design optimality. In this paper, we discuss the challenges of device-circuit-system design at the 22 nm node and present techniques at different levels of design abstraction to meet these challenges. In particular, we discuss different device options for multi-gate FETs. Logic and memory design using multi-gate FETs is also considered. Finally, we briefly discuss process variation tolerant system design methodologies for such scaled technologies.

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INDEX TERMS

Primary Classification:
  B. Hardware
  B.7 INTEGRATED CIRCUITS
      B.7.1 Types and Design Styles

General Terms:
Design

Keywords:
22 nm technology node, DG MOSFETs, FinFETs, SRAM, scaling, transistor sizing