| Decoding nanowire arrays fabricated with the multi-spacer patterning technique |
| Full text |
Pdf
(346 KB)
|
| Source
|
Annual ACM IEEE Design Automation Conference
archive
Proceedings of the 46th Annual Design Automation Conference
table of contents
San Francisco, California
SESSION: Design and optimization of nanocircuits
table of contents
Pages 77-82
Year of Publication: 2009
ISBN:978-1-60558-497-3
|
|
Authors
|
|
| Sponsors |
|
| Publisher |
|
| Bibliometrics |
Downloads (6 Weeks): 11, Downloads (12 Months): 11, Citation Count: 0
|
|
|
ABSTRACT
Silicon nanowires are a promising solution to address the increasing challenges of fabrication and design at the future nodes of the Complementary Metal-Oxide-Semiconductor (CMOS) Technology roadmap. Despite the attractive opportunity that offers their organization onto regular crossbars, the problem of designing the nano-wire decoder is still challenging and highly dependent on the nanowire fabrication technology. In this paper, we introduce a novel design style and encoding scheme for decoding nanowires fabricated with the Multi-Spacer-Patterning Technique (MSPT); and we present a method based on Gray codes that reduces the fabrication cost and improves the decoder reliability. We show that by arranging the code in a Gray code fashion, we decrease the fabrication complexity by 17% and the variability by 18% on average. By optimizing the decoder parameters, the simulations showed an improvement of the crossbar yield by 40% and a reduction of the effective bit area by 51% to 169 nm2.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
| |
1
|
R. Beckman et al. Bridging dimensions: Demultiplexing ultrahigh density nanowire circuits. Science, 310(5747):465--468, 2005.
|
| |
2
|
M. H. Ben Jamaa et al. Variability-aware design of multi-level logic decoders for nanoscale crossbar memories. Trans. CAD, 27(11):2053--2067, Nov. 2008.
|
| |
3
|
G. S. Bhat and C. D. Savage. Balanced Gray codes. The Electronic Journal of Combinatorics, 3(1):R25, 1996.
|
| |
4
|
G. Cerofolini. Realistic limits to computation. II. The technological side. Applied Physics A, 86(1):31--42, 2007.
|
| |
5
|
A. DeHon. Design of programmable interconnect for sublithographic programmable logic arrays. In Proc. Int. Symp. on FPGA, pages 127--137, 2005.
|
| |
6
|
A. DeHon et al. Stochastic assembly of sublithographic nanoscale interfaces. IEEE Trans. on Nanotechnology, 2(3):165--174, 2003.
|
| |
7
|
F. Gray. Pulse code communication. US Patent No. 2632058, 1953.
|
| |
8
|
T. Hogg et al. Assembling nanoscale circuits with randomized connections. Trans. on Nanotechnology, 5(2):110--122, 2006.
|
| |
9
|
J. D. Holmes et al. Control of thickness and orientation of solution-grown silicon nanowires. Science, 287(5457):1471--1473, 2000.
|
| |
10
|
Y. Luo et al. Two-dimensional molecular electronics circuits. ChemPhysChem, 3:519--525, 2002.
|
| |
11
|
N. A. Melosh et al. Ultrahigh-density nanowire lattices and circuits. Science, 300(5616):112--115, 2003.
|
| |
12
|
K. E. Moselund et al. Prospects for logic-on-a-wire. Microelectronic Engineering, (85):1406--1409, 2008.
|
| |
13
|
J. E. Savage et al. Radial addressing of nanowires. Journal on Emerging Technologies in Computing Systems, 2(2):129--154, 2006.
|
| |
14
|
S. M. Sze and K. K. Ng. Physics of Semiconductor Devices. 2007.
|
| |
15
|
D. Whang et al. Large-scale hierarchical organization of nanowire arrays for integrated nanosystems. Nano Letters, 3(9):1255--1259, 2003.
|
| |
16
|
Y. Zhang et al. An integrated phase change memory cell with ge nanowire diode for cross-point memory. VLSI Technology, pages 98--99, June 2007.
|
|