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Low-power FinFET circuit synthesis using multiple supply and threshold voltages
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ACM Journal on Emerging Technologies in Computing Systems (JETC) archive
Volume 5 ,  Issue 2  (July 2009) table of contents
Article No.: 7  
Year of Publication: 2009
ISSN:1550-4832
Authors
Prateek Mishra  Princeton University, Princeton, NJ
Anish Muttreja  Princeton University, Princeton, NJ
Niraj K. Jha  Princeton University, Princeton, NJ
Publisher
ACM  New York, NY, USA
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ABSTRACT

According to Moore's law, the number of transistors in a chip doubles every 18 months. The increased transistor-count leads to increased power density. Thus, in modern circuits, power efficiency is a central determinant of circuit efficiency. With scaling, leakage power accounts for an increasingly larger portion of the total power consumption in deep submicron technologies (>40%).

FinFET technology has been proposed as a promising alternative to deep submicron bulk CMOS technology, because of its better scalability, short-channel characteristics, and ability to suppress leakage current and mitigate device-to-device variability when compared to bulk CMOS. The subthreshold slope of a FinFET is approximately 60mV which is close to ideal.

In this article, we propose a methodology for low-power FinFET based circuit synthesis. A mechanism called TCMS (Threshold Control through Multiple Supply Voltages) was previously proposed for improving the power efficiency of FinFET based global interconnects. We propose a significant generalization of TCMS to the design of any logic circuit. This scheme represents a significant divergence from the conventional multiple supply voltage schemes considered in the past. It also obviates the need for voltage level-converters. We employ accurate delay and power estimates using table look-up methods based on HSPICE simulations for supply voltage and threshold voltage optimization. Experimental results demonstrate that TCMS can provide power savings of 67.6% and device area savings of 65.2% under relaxed delay constraints. Two other variants of TCMS are also proposed that yield similar benefits. We compare our scheme to extended cluster voltage scaling (ECVS), a popular dual-Vdd scheme presented in the literature. ECVS makes use of voltage level-converters. Even when it is assumed that these level-converters have zero delay, thus significantly favoring ECVS in time-constrained power optimization, TCMS still outperforms ECVS.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

1
 
2
 
3
Cakici, T., Mahmoodi, H., Mukhopadhyay, S., and Roy, K. 2005. Independent gate skewed logic in double-gate SOI technology. In Proceedings of the International SOI Conference. 83--84.
 
4
Chang, L., Tang, S., King, T.-J., Bokor, J., and Hu, C. 2000. Gate length scaling and threshold voltage control of double-gate MOSFETs. In Proceedings of the International Electronic Device Meeting. 719--722.
 
5
Chiang, M.-H., Kim, K., Tretz, C., and Chuang, C.-T. 2005. Novel high-density low-power logic circuit techniques using DG devices. IEEE Electron. Dev. Lett. 52, 10, 2339--2342.
6
 
7
Datta, A., Goel, A., Cakici, R. T., Mahmoodi, H., Lakshmanan, D., and Roy, K. 2007. Modeling and circuit synthesis for independently controlled double-gate FinFET devices. IEEE Trans. Comput.-Aid. Des. 26, 11, 1957--1966.
 
8
Diril, A. U., Dhillon, Y. S., Chatterjee, A., and Singh, A. D. 2005. Level-shifter free design of low-power dual supply voltage CMOS circuits using dual threshold voltages. IEEE Trans. VLSI Syst. 13, 9, 1103--1107.
 
9
 
10
 
11
Su, L. T., Chung, J. E., Antoniadis, D. A., Goodson, K. E., and Flik, M. I. 1994. Measurement and modelling of self-heating in SOI nMOSFET's. IEEE Electron. Dev. Lett. 41, 69--75.
 
12
Mahmoodi, H., Mukhopadhyay, S., and Roy, K. 2004. High-performance and low-power domino logic using independent gate control in double-gate SOI MOSFETs. In Proceedings of the International SOI Conference. 67--68.
 
13
 
14
Muttreja, A., Agarwal, N., and Jha, N. K. 2007. CMOS logic design with independent gate FinFETs. In Proceedings of the International Conference on Computer Design. 560--567.
 
15
 
16
Nowak, E. J., Aller, I., Ludwig, T., Kim, K., Joshi, R. V., Chuang, C.-T., Bernstein, K., and Puri, R. 2004. Turning silicon on its edge. IEEE Circ. Dev. Mag. 20, 1, 20--31.
17
 
18
Roy, K., Wei, L., and Chen, Z. 1999. Multiple-V<sub>dd</sub> and multiple-V<sub>th</sub> CMOS (MVCMOS) for low-power applications. In Proceedings of the International Symposium on Computer Architecture. 366--370.
19
20
21
 
22
Trivedi, V. P., Fossum, J. G., and Zhang, W. 2007. Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies. Solid-State Electron. 1, 170--178.
23
 
24
Usami, K., Igarashi, M., Minami, F., Ishikawa, T., Kanzawa, M., Ichida, M., and Nogami, K. 1998. Automated low-power technique exploiting multiple supply voltages applied to a media processor. IEEE J. Solid-State Circ. 33, 3, 463--472.
 
25
 
26
Wei, L., Chen, Z., and Roy, K. 1997. Double-gate dynamic threshold voltage (DGDT) SOI MOSFETs for low-power high-performance designs. In Proceedings of the International SOI Conference. 82--83.
 
27
Yu, B., Chang, L., Shibly, A. et al. 2002. FinFET scaling to 10nm gate length. In Proceedings of the International Electronic Device Meeting. 251--254.
 
28
Zhang, W., Fossum, J. G., Mathew, L., and Du, Y. 2005. Physical insights regarding design and performance of independent-gate FinFETs. IEEE Elect. Dev. Lett. 52, 10, 2189--2206.
 
29
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Collaborative Colleagues:
Prateek Mishra: colleagues
Anish Muttreja: colleagues
Niraj K. Jha: colleagues