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Write amplification analysis in flash-based solid state drives
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Proceedings of SYSTOR 2009: The Israeli Experimental Systems Conference table of contents
Haifa, Israel
SESSION: Storage table of contents
Article No. 10  
Year of Publication: 2009
ISBN:978-1-60558-623-6
Authors
Xiao-Yu Hu  IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Evangelos Eleftheriou  IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Robert Haas  IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Ilias Iliadis  IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Roman Pletka  IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Sponsors
: Melanox Technologies
: Hebrew University of Jerusalem
IBM : IBM
Publisher
ACM  New York, NY, USA
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ABSTRACT

Write amplification is a critical factor limiting the random write performance and write endurance in storage devices based on NAND-flash memories such as solid-state drives (SSD). The impact of garbage collection on write amplification is influenced by the level of over-provisioning and the choice of reclaiming policy. In this paper, we present a novel probabilistic model of write amplification for log-structured flash-based SSDs. Specifically, we quantify the impact of over-provisioning on write amplification analytically and by simulation assuming workloads of uniformly-distributed random short writes. Moreover, we propose modified versions of the greedy garbage-collection reclaiming policy and compare their performance. Finally, we analytically evaluate the benefits of separating static and dynamic data in reducing write amplification, and how to address endurance with proper wear leveling.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Xiao-Yu Hu: colleagues
Evangelos Eleftheriou: colleagues
Robert Haas: colleagues
Ilias Iliadis: colleagues
Roman Pletka: colleagues