ACM Home Page
Please provide us with feedback. Feedback
Power distribution paths in 3-D ICS
Full text PdfPdf (585 KB)
Source
Great Lakes Symposium on VLSI archive
Proceedings of the 19th ACM Great Lakes symposium on VLSI table of contents
Boston Area, MA, USA
SESSION: Emerging technology and post-CMOS table of contents
Pages 263-268  
Year of Publication: 2009
ISBN:978-1-60558-522-2
Authors
Vasilis F. Pavlidis  EPFL, Lausanne, Switzerland
Giovanni De Micheli  EPFL, Lausanne, Switzerland
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 22,   Downloads (12 Months): 72,   Citation Count: 0
Additional Information:

abstract   references   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/1531542.1531605
What is a DOI?

ABSTRACT

Distributing power and ground to a vertically integrated system is a complex and difficult task. Interplane communication and power delivery are achieved by through silicon vias (TSVs) in most of the manufacturing techniques for three-dimensional (3-D) circuits. As shown in this paper, these vertical interconnects provide additional low impedance paths for distributing power and ground within a 3-D circuit. These paths, however, have not been considered in the design process of 3-D power and ground distribution networks. By exploiting these additional paths, the IR drop within each plane is reduced. Alternatively, the routing congestion caused by the TSVs can be decreased by removing stacks of metal vias that are used within a power distribution network. Additionally, the required decoupling capacitance for a circuit can be reduced, resulting in significant savings in area. Case studies of power grids demonstrate a significant reduction of 22% in the number of intraplane vias. Alternatively, a 25% decrease in the decoupling capacitance can be achieved.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
 
2
M. Popovich, A. V. Mezhiba, and E. G. Friedman, Power Distribution Networks with On-Chip Decoupling Capacitors, Springer, 2008.
 
3
R. S. Patti, "Three-Dimensional Integrated Circuits and the Future of System-on-Chip Designs, Proceedings of the IEEE, Vol. 94, No. 6, pp. 1214--1224, June 2006.
 
4
J. Sun et al., "3D Power Delivery for Microprocessors and High-Performance ASICS," Proceedings of the IEEE Applied Power Electronics Conference, pp. 127--133, February 2007.
 
5
G. Huang et al., "Power Delivery for 3D Chip Stacks: Physical Modeling and Design Implication, Proceedings of the IEEE Electrical Performance of Electronic Packaging Conference, pp. 205--208, October 2007.
 
6
C. K. Chen et al., Characterization of a Three-Dimensional SOI Integrated-Circuit Technology," Proceedings of the IEEE SOI Conference, pp. 109--110, October 2008.
7
 
8
R. Doering and Y. Nishi (eds.), Handbook of Semiconductor Manufacturing Technology, CRC Press, 2008.
 
9

Collaborative Colleagues:
Vasilis F. Pavlidis: colleagues
Giovanni De Micheli: colleagues