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An adaptive block-set based management for large-scale flash memory
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Symposium on Applied Computing archive
Proceedings of the 2009 ACM symposium on Applied Computing table of contents
Honolulu, Hawaii
SESSION: Embedded systems track table of contents
Pages: 1621-1625  
Year of Publication: 2009
ISBN:978-1-60558-166-8
Authors
Zhanzhan Liu  University of Science and Technology of China, Hefei, P.R. China
Lihua Yue  University of Science and Technology of China, Hefei, P.R. China
Peng Wei  University of Science and Technology of China, Hefei, P.R. China
Peiquan Jin  University of Science and Technology of China, Hefei, P.R. China
Xiaoyan Xiang  University of Science and Technology of China, Hefei, P.R. China
Sponsor
SIGAPP: ACM Special Interest Group on Applied Computing
Publisher
ACM  New York, NY, USA
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ABSTRACT

With rapid increase of the capacity of flash-memory storage systems, it becomes critical to provide efficient management for large-scale flash-memory. Compared with FTL (Flash Translation Layer), NFTL (NAND Flash Translation Layer) provides less main-memory space requirements for large-scale flash memory. However, because each replacement block is exclusively used by a logical block, NFTL exhibits poor space utilization of flash memory. In this paper, we present an adaptive block-set based flash memory management. The presented scheme adopts shared and exclusive replacement blocks, and allocates replacement blocks according to the update loads of logical blocks. The experimental results show that the presented scheme yields a better performance in garbage collection than NFTL and FAST (fully associative sector translation), keeping space utilization of flash memory at high level.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

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Intel Corporation. Understanding the Flash Translation Layer (FTL) Specification. Technical report AP-684, 1998.
 
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J. Kim, J. M. Kim, S. H. Noh, et al. A Space-Efficient Flash Translation Layer for Compact-Flash Systems. IEEE Trans. on Consumer Electronics, Vol. 48, No. 2, 2002, 366--375.
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Samsung Electronics. K9XXG08UXA 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Data Sheet. 2006.
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Collaborative Colleagues:
Zhanzhan Liu: colleagues
Lihua Yue: colleagues
Peng Wei: colleagues
Peiquan Jin: colleagues
Xiaoyan Xiang: colleagues