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High-speed low-power FinFET based domino logic
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Asia and South Pacific Design Automation Conference archive
Proceedings of the 2009 Asia and South Pacific Design Automation Conference table of contents
Yokohama, Japan
SESSION: Emerging technologies table of contents
Pages 829-834  
Year of Publication: 2009
ISBN:978-1-4244-2748-2
Authors
Seid Hadi Rasouli  University of California, Santa Barbara
Hanpei Koike  Nanoelectronics Research Institute, Tsukuba, Ibaraki, Japan
Kaustav Banerjee  University of California, Santa Barbara
Sponsors
: IEEE Circuits and Systems Society
SIGDA: ACM Special Interest Group on Design Automation
IEICE ESS : Institute of Electronics, Information and Communication Engineers - Engineering Sciences Society
IPSJ SIGSLDM : Information Processing Society of Japan - SIG System LSI Design Methodology
Publisher
IEEE Press  Piscataway, NJ, USA
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ABSTRACT

This paper introduces a novel FinFET based domino logic, which exploits the exclusive property of the FinFET device (capacitive coupling between front-gate and back-gate in a four-terminal (4T) FinFET) to simultaneously achieve higher performance and lower power consumption. Using a new implementation of the resistive gate, the keeper device is made weaker at the beginning of the evaluation phase to reduce its contention with the pull-down network, but gradually becomes stronger to provide high noise margin. The strength of the keeper device is controlled by the differential gate voltage, which guarantees low gate-source voltage at the beginning of the evaluation phase and high gate-source voltage during rest of the time.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Seid Hadi Rasouli: colleagues
Hanpei Koike: colleagues
Kaustav Banerjee: colleagues