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Statistical modeling and analysis of chip-level leakage power by spectral stochastic method
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Asia and South Pacific Design Automation Conference archive
Proceedings of the 2009 Asia and South Pacific Design Automation Conference table of contents
Yokohama, Japan
SESSION: Power analysis and optimization table of contents
Pages 161-166  
Year of Publication: 2009
ISBN:978-1-4244-2748-2
Authors
Ruijing Shen  University of California, Riverside, CA
Ning Mi  University of California, Riverside, CA
Sheldon X.-D. Tan  University of California, Riverside, CA
Yici Cai  Tsinghua University, Beijing, China
Xianlong Hong  Tsinghua University, Beijing, China
Sponsors
: IEEE Circuits and Systems Society
SIGDA: ACM Special Interest Group on Design Automation
IEICE ESS : Institute of Electronics, Information and Communication Engineers - Engineering Sciences Society
IPSJ SIGSLDM : Information Processing Society of Japan - SIG System LSI Design Methodology
Publisher
IEEE Press  Piscataway, NJ, USA
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ABSTRACT

In this paper, we present a novel statistical full-chip leakage power analysis method. The new method can provide a general framework to derive the full-chip leakage current or power in a closed form in terms of the variational parameters, such as the channel length, the gate oxide thickness, etc. It can accommodate various spatial correlations. The new method employs the orthogonal polynomials to represent the variational gate leakages in a closed form first, which is generated by a fast multi-dimensional Gaussian quadrature method. The total leakage currents then are computed by simply summing up the resulting orthogonal polynomials (their coefficients). Unlike many existing approaches, no grid-based partitioning and approximation are required. Instead, the spatial correlations are naturally handled by orthogonal decompositions. The proposed method is very efficient and it becomes linear in the presence of strong spatial correlations. Experimental results show that the proposed method is about 10x faster than the recently proposed method [4] with constant better accuracy.


REFERENCES

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Collaborative Colleagues:
Ruijing Shen: colleagues
Ning Mi: colleagues
Sheldon X.-D. Tan: colleagues
Yici Cai: colleagues
Xianlong Hong: colleagues