|
ABSTRACT
To overcome the energy-efficiency limitations imposed by finite sub-threshold slope in CMOS transistors, this paper explores the design of integrated circuits based on nanoelectro-mechanical (NEM) relays. A dynamical Verilog-A model of the NEM relay is described and correlated to device measurements. Using this model we explore NEM relay design strategies for digital logic and I/O that can significantly improve the energy efficiency of the whole VLSI system. By exploiting the low effective threshold voltage and zero leakage achievable with these relays, we show that NEM relay-based adders can achieve an order of magnitude or more improvement in energy efficiency over CMOS adders with ns-range delays and with no area penalty. By applying parallelism, this improvement in energy-efficiency can be achieved at higher throughputs as well, at the cost of increased area. Similar improvements in high-speed I/O energy are also predicted by making use of the relays to implement highly energy-efficient digital-to-analog and analog-to-digital converters.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
| |
1
|
B. H. Calhoun, A. Wang, and A. Chandrakasan, "Modeling and sizing for minimum energy operation in subthreshold circuits," IEEE J. Solid-State Circuits, vol. 40, Sept. 2005, pp. 1778--1786.
|
| |
2
|
K. Gopalakrishnan et al., "I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q," in IEDM Tech. Dig., 2002, pp. 289--292.
|
| |
3
|
W.-Y. Choi et al., "Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec," IEEE Electron Device Letters, pp. 743--745, Aug. 2007.
|
| |
4
|
P. M. Zavracky, S. Majumder, and N. E. McGruer, "Micromechanical switches fabricated using nickel surface micromachining," IEEE J. Microelectromech. Syst., vol. 6, no. 1, pp. 3--9, 1997
|
| |
5
|
A. Q. Liu, M. Tang, A. Agarwal, and A. Alphones, "Low-loss lateral micromachined switches for high frequency applications," J. Micromech. Microeng. vol. 15, Jan. 2005, pp.157--167.
|
| |
6
|
C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen, and B. Norvell, "Characteristics of micromachined switches at microwave frequencies," in 1996 IEEE MTT-S Int. Microwave Symp. Dig., San Francisco, CA, Jun. 1996, pp. 1141--1144
|
| |
7
|
J. B. Muldavin and G. M. Rebeiz, "Inline capacitive and DC-contact MEMS shunt switches," IEEE Microwave Wireless Compon. Lett., vol. 11, pp. 334--336, Aug 2001
|
| |
8
|
G.-L. Tan and G. M. Rebeiz, "A DC-contact MEMS shunt switch," IEEE Microwave Wireless Compon. Lett., vol. 12, pp. 212--214, Jun. 2002.
|
| |
9
|
K. Wang, A.-C. Wong, and C. T.-C. Nguyen, "VHF free-free beam high-Q micromechanical resonators," J. Microelectromechanical Systems, vol. 9, no. 3, Sep. 2000, pp. 347--360.
|
| |
10
|
G. K. Fedder, "Simulation of microelectromechanical systems," Ph.D. dissertation, Department of Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, Sept. 1994.
|
| |
11
|
R. K. Gupta and S. D. Senturia, "Pull-in time dynamics as a measure of absolute pressure," in Proc. MEMS 1997, pp. 290--294.
|
| |
12
|
|
| |
13
|
R. Maboudian and R. T. Howe, "Critical Review: Adhesion in surface micromechanical structures," AVS Journal of Vacuum Science and Technology B, vol 15, no. 1, Jan. 2007, pp. 1--20.
|
| |
14
|
D. Hyman and M, Mehregany, "Contact Physics of Gold Microcontacts for MEMS Switches," IEEE Trans. on Components and Packaging Technology, vol. 22, no. 3, Sept. 1999, pp. 357--364.
|
| |
15
|
K. Akarvardar et al, "Design Considerations for Complementary Nanoelectromechanical Logic Gates," IEEE International Electron Devices Meeting, pp. 299--302, Dec. 2007.
|
| |
16
|
R. Holm: Electric Contact, Springer Verlag, pp.7--26, 1967
|
| |
17
|
S. C. Bromley and B. J. Nelson, "Performance of microcontacts tested with a novel MEMS device," in Proc. 47th IEEE Holm Conf. Elect. Contacts, 2001, pp. 122--127.
|
| |
18
|
R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. R. LeBlanc, "Design of ion-implanted MOSFET's with very small physical dimensions," IEEE J. Solid-State Circuits, vol. SC-9, pp. 256, 1974.
|
| |
19
|
L. Castaner, A. Rodriguez, J. Pons, and S. D. Senturia, "Pull-in time-energy product of electrostatic actuators: comparison of experiments with simulation," Sensors and Actuators A: vol. 83, no. 1--3, 22 May 2000, pp. 263--269.
|
| |
20
|
|
| |
21
|
J. Sklansky. "Conditional-sum addition logic". IRE Trans. on Electronic Computers, EC-9:226--231, 1960.
|
| |
22
|
K.-L.J. Wong, H. Hatamkhani, M. Mansuri, and C.-K.K. Yang, "A 27-mW 3.6Gb/s I/O Transceiver," IEEE Journal of Solid-State Circuits, vol. 39, no. 4, Apr. 2004, pp. 602--612.
|
| |
23
|
R. Palmer et al., "A 14mW 6.25Gb/s Transceiver in 90nm CMOS for Serial Chip-to-Chip Communication," IEEE International Solid-State Circuits Conference, pp. 440--441, Feb. 2007.
|
| |
24
|
B. P. Ginsburg and A. P. Chandrakasan, "500-MS/s 5-bit ADC in 65-nm CMOS With Split Capacitor Array DAC", IEEE J. Solid-State Circuits, vol. 42, no. 4, April 2007, pp. 739 -- 747.
|
|