Graphene nanoribbon FETs: technology exploration and CAD

ABSTRACT

Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFETs as ultimately scaled, ideal ballistic transistors, (ii) physics-based modeling of GNRFETs to support circuit design and CAD, and (iii) variability and defects in GNRs and their impact on GNRFET circuit performance and reliability.

REFERENCES

• 1: K. S. Novoselov et al., "Electric field effect in atomically thin carbon films," Science, vol. 306, pp. 666--669, 2004.
• 2: Y. Zhang et al., "Experimental observation of the quantum Hall effect and Berry's phase in graphene," Nature, vol. 438, pp. 201--204, 2005.
• 3: C. Berger et al., "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, pp. 1191--1196, 2006.
• 4: R. V. Noorden, "Moving towards a graphene world," Nature, vol. 442, pp. 228--229, 2006.
• 5: A. K. Geim and K. S. Novoselov, "The rise of graphene," Nature Materials, vol. 6, pp. 183--191, 2007.
• 6: W. A. de Heer et al., "Pionics: The emerging science and technology of graphene-based nanoelectronics," in Intl. Electron Devices Meeting Technical Digest, pp. 199--202, 2007.
• 7: Z. Chen et al., "Graphene nano-ribbon electronics," Physica E: Low-dimensional Systems and Nanostructures, vol. 40, no. 2, pp. 228--232, 2007.
• 8: M. Y. Han et al., "Energy band-gap engineering of graphene nanoribbons," Physical Review Letters, vol. 98, p. 206805, 2007.
• 9: X. Li et al., "Chemically derived, ultrasmooth graphene nanoribbon semiconductors," Science, vol. 319, pp. 1229--1232, 2008.
• 10: Y.-W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons," Physical Review Letters, vol. 97, p. 216803, 2006.
• 11: S. Heinze et al., "Carbon nanotubes as Schottky barrier transistors," Physical Review Letters, vol. 89, p. 106801, Aug. 2002.
• 12: X. Wang et al., "Room temperature all-semiconducting sub-10nm graphene nanoribbon field-effect transistors," Physical Review Letters, vol. 100, p. 206803, 2008.
• 13: B. Özyilmaz et al., "Electronic transport in locally gated graphene nanoconstrictions," Applied Physics Letters, vol. 91, p. 192107, 2007.
• 14: Y. Ouyang et al., "Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study," IEEE Trans. Electron Devices, vol. 54, pp. 2223--2231, Sep. 2007.
• 15: G. Fiori and G. Iannaccone, "Simulation of graphene nanoribbon field-effect transistors," IEEE Electron Device Letters, vol. 28, pp. 760--762, Aug. 2007.
• 16: G. Liang et al., "Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation," Journal of Applied Physics, vol. 102, p. 054307, 2007.
• 17: G. Liang et al., "Performance projections for ballistic graphene nanoribbon fieldeffect transistors," IEEE Trans. Electron Devices, vol. 54, pp. 677--682, Apr. 2007.
• 18: G. Fiori et al., "Performance comparison of graphene nanoribbon Schottky barrier and MOS FETs," in Intl. Electron Devices Meeting Technical Digest, pp. 757--760, 2007.
• 19: Y. Yoon et al., "Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs," IEEE Trans. Electron Devices. To appear.
• 20: B. Huard et al., "Transport measurements across a tunable potential barrier in graphene," Physical Review Letters, vol. 98, p. 236803, 2007.
• 21: J. B. Oostinga et al., "Gate-induced insulating state in bilayer graphene devices," Nature Materials, vol. 7, pp. 151--157, Feb. 2008.
• 22: M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, "Chiral tunnelling and the Klein paradox in graphene," Nature Physics, vol. 2, pp. 620--625, 2006.
• 23: Y. Ouyang, P. Campbell, and J. Guo, "Analysis of ballistic monolayer and bilayer graphene field-effect transistors," Applied Physics Letters, vol. 92, p. 063120, 2008.
• 24: K. Nakada et al., "Edge state in graphene ribbons: Nanometer size effect and edge shape dependence," vol. 54, pp. 17954--17961, Dec. 1996.
• 25: S. Datta, Quantum transport: Atom to transistor. Cambridge, UK: Cambridge University Press, 2005.
• 26: M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation. New York, NY: Springer, 2006.
• 27: Paolo Antognetti , Giuseppe Massobrio , Guiseppe Massobrio, Semiconductor Device Modeling with Spice, McGraw-Hill, Inc., New York, NY, 1993
• 28: Z. Chen et al., "An integrated logic circuit assembled on a single carbon nanotube," Science, vol. 311, p. 1735, 2006.
• 29: Mihir Choudhury , Youngki Yoon , Jing Guo , Kartik Mohanram, Technology exploration for graphene nanoribbon FETs, Proceedings of the 45th annual conference on Design automation, June 08-13, 2008, Anaheim, California [doi>10.1145/1391469.1391539]
• 30: K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," Journal of Applied Physics, vol. 76, no. 8, pp. 4879--4890, 1994.
• 31: A. Rahman et al., "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, pp. 1853--1864, Sep. 2003.
• 32: A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit-compatible model of ballistic carbon nanotube field-effect transistors," IEEE Trans. Computer-aided Design, vol. 23, pp. 1411--1420, Oct. 2004.
• 33: H.-S. Philip Wong , Jie Deng , Arash Hazeghi , Tejas Krishnamohan , Gordon C. Wan, Carbon nanotube transistor circuits: models and tools for design and performance optimization, Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design, November 05-09, 2006, San Jose, California [doi>10.1145/1233501.1233636]
• 34: D. Jiménez et al., "A simple drain current model for Schottky-barrier carbon nanotube field effect transistors," Nanotechnology, vol. 18, p. 025201, 2007.
• 35: B. C. Paul et al., "An analytical compact circuit model for nanowire FET," IEEE Trans. Electron Devices, vol. 54, pp. 1637--1644, Jul.
• 36: J. Deng and H.-S. P. Wong, "A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application-Part 1: Model of the intrinsic channel region," IEEE Trans. Electron Devices, vol. 54, pp. 3186--3194, 2007.
• 37: Hamidreza Hashempour , Fabrizio Lombardi, Device Model for Ballistic CNFETs Using the First Conducting Band, IEEE Design & Test, v.25 n.2, p.178-186, March 2008 [doi>10.1109/MDT.2008.34]
• 38: C. T. White et al., "Hidden one-electron interactions in carbon nanotubes revealed in graphene nanostrips," Nano Letters, vol. 7, pp. 825--830, 2007.
• 39: D. Gunlycke and C. T. White, "Tight-binding energy dispersions of armchairedge graphene nanostrips," Physical Review B, vol. 77, p. 115116, 2008.
• 40: Pei Zhao , Mihir Choudhury , Kartik Mohanram , Jing Guo, Analytical Theory of Graphene Nanoribbon Transistors, Proceedings of the 2008 IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems, p.3-6, September 29-30, 2008 [doi>10.1109/NDCS.2008.22]
• 41: Asha Balijepalli , Saurabh Sinha , Yu Cao, Compact modeling of carbon nanotube transistor for early stage process-design exploration, Proceedings of the 2007 international symposium on Low power electronics and design, August 27-29, 2007, Portland, OR, USA [doi>10.1145/1283780.1283783]
• 42: D. Basu et al., "Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters, vol. 92, no. 4, p. 042114, 2008.
• 43: Y. Yoon and J. Guo, "Effect of edge roughness in graphene nanoribbon transistors," Applied Physics Letters, vol. 91, p. 073103, 2007.