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Breaking the simulation barrier: SRAM evaluation through norm minimization
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International Conference on Computer Aided Design archive
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design table of contents
San Jose, California
SESSION: Circuit and system optimization and modeling table of contents
Pages 322-329  
Year of Publication: 2008
ISBN ~ ISSN:1092-3152 , 978-1-4244-2820-5
Authors
Lara Dolecek  Massachusetts Institute of Technology, Cambridge, MA
Masood Qazi  Massachusetts Institute of Technology, Cambridge, MA
Devavrat Shah  Massachusetts Institute of Technology, Cambridge, MA
Anantha Chandrakasan  Massachusetts Institute of Technology, Cambridge, MA
Sponsors
: IEEE CASS/CANDE
: IEEE Council on Electronic Design Automation (CEDA)
SIGDA: ACM Special Interest Group on Design Automation
Publisher
IEEE Press  Piscataway, NJ, USA
Bibliometrics
Downloads (6 Weeks): 13,   Downloads (12 Months): 72,   Citation Count: 0
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ABSTRACT

With process variation becoming a growing concern in deep submicron technologies, the ability to efficiently obtain an accurate estimate of failure probability of SRAM components is becoming a central issue. In this paper we present a general methodology for a fast and accurate evaluation of the failure probability of memory designs. The proposed statistical method, which we call importance sampling through norm minimization principle, reduces the variance of the estimator to produce quick estimates. It builds upon the importance sampling, while using a novel norm minimization principle inspired by the classical theory of Large Deviations. Our method can be applied for a wide class of problems, and our illustrative examples are the data retention voltage and the read/write failure tradeoff for 6T SRAM in 32 nm technology. The method yields computational savings on the order of 10000x over the standard Monte Carlo approach in the context of failure probability estimation for SRAM considered in this paper.


REFERENCES

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1
Available at http://www.iSuppli.com
2
 
3
 
4
J. A. Bucklew, Large Deviation Techniques in Decision, Simulation, and Estimation, Wiley Series in Prob. and Math. Stat., 1990.
 
5
B. H. Calhoun and A. P. Chandrakasan, "Static noise margin variation for sub-threshold SRAM in 65-nm CMOS," in IEEE Journal of Solid-State Circuits, vol. 41, no. 7, July 2006, pp. 1673 -- 79.
 
6
 
7
 
8
S. A. Edwards, The Nanotech Pioneers: Where Are They Taking Us, Wiley, 2006.
 
9
D. J. Frank, Y. Taur, M. Ieong and H. P. Wong, "Monte Carlo modeling of threshold variation due to dopant fluctuations," in Symposium on VLSI Technology, 1999, pp. 169 -- 170.
 
10
 
11
H.-F. Jyu, S. Malik, S. Devadas, and K. Keutzer, "Statistical timing analysis of combinatorial logic circuits," IEEE Trans. on VLSI Systems, vol. 1, no. 2, June 1993, pp. 126 -- 137.
12
 
13
14
 
15
 
16
 
17
A. Srivastava, D. Sylvester, and D. Blaauw, Statistical Analysis and Optimization for VLSI: Timing and Power, Springer 2005.
 
18
R. Srinivasan, Importance Sampling: Applications in Communications and Detection, Springer, 2002.
 
19
G. Varghese et al. "Penryn: 45-nm next generation Intel®core#8482; 2 processor," in ASSCC, 2007, pp. 14 -- 17.
 
20
N. Verma and A. P. Chandrakasan, "A 65nm 8T sub-Vt SRAM employing sense-amplifier redundancy," in ISSCC, 2007, pp. 328 -- 329.
 
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Collaborative Colleagues:
Lara Dolecek: colleagues
Masood Qazi: colleagues
Devavrat Shah: colleagues
Anantha Chandrakasan: colleagues