A simulator for ballistic nanostructures in a 2-D electron gas

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A simulator for ballistic nanostructures in a 2-D electron gas

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ACM Journal on Emerging Technologies in Computing Systems (JETC) archive
Volume 5 , Issue 1 (January 2009) table of contents

Article No. 5

Year of Publication: 2009

ISSN:1550-4832

Authors

Dennis Huo	University of Rochester, Rochester, NY
Qiaoyan Yu	University of Rochester, Rochester, NY
David Wolpert	University of Rochester, Rochester, NY
Paul Ampadu	University of Rochester, Rochester, NY

Publisher

ACM New York, NY, USA

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ABSTRACT

A multipurpose simulator for ballistic nanostructures, based on classical mechanics of electrons at the Fermi level, has been successfully implemented. Despite the simplicity of the model, the simulator successfully reproduces a number of experimental results, and is shown to consistently match observed current-voltage characteristics and magnetoresistance phenomena. The simulator results provide design guidelines for devices which operate on ballistic transport principles. Using the simulator, preliminary logic structures have been designed based on the ballistic deflection transistor.

REFERENCES

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	1	Barnes, J. and Hut, P. 1986. A Hierarchical O(n log n) force calculation algorithm. Nature 324, 446--449.
	2	Bednarz, L., Rashmi, Farhi, G., Hackens, B., Bayot, V., Huynen, I., Galloo, J. S., Roelens, Y., Bollaert, S., and Cappy, A. 2005. Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz. In Proceedings of the 35th European Microwave Conference. Horizon House Publications, London, UK, 4--8.
	3	Beenakker, C. W. J. and van Houten, H. 1989. Billiard model of a ballistic multiprobe conductor. Phys. Rev. Lett. 63, 17, 1857--1860.
	4	Beenakker, C. W. J. and van Houten, H. 1991. Quantum transport in semiconductor nanostructures. Solid State Phys. 44, 1--111.
	5	Datta, S. 1995. Electron Transport in Mesoscopic Systems. Cambridge University Press, Cambridge, UK.
	6	Davies, J. 1998. The Physics of Low-Dimensional Semiconductors: An Introduction. Cambridge University Press, Cambridge, UK.
	7	Diduck, Q. 2006. Private comm., http://www.science.rochester.edu/depts/ece/archives/ece_061507. html
	8	Diduck, Q., Margala, M., and Feldman, M. J. 2006. Terahertz transistor based on geometrical deflection of ballistic current. In Proceedings of the IEEE MTT-S International Microwave Symposium Digest, 345--347.
	9	Galloo, J. S., Roelens, Y., Bollaert, S., Pichonat, E., Wallart, X., Cappy, A., Mateos, J., and Gonzales, T. 2004. Ballistic GaInAs/AlInAs devices technology and characterization at room temperature. In Proceedings of the 4th IEEE Conference on Nanotechnology, 98--100.
	10	Hess, K. and Iafrate, G. J. 1988. Theory and applications of near ballistic transport in semiconductors. In Proc. IEEE 76, 5, 519--532.
	11	Hirayama, Y. and Tarucha, S. 1993. High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures. Appl. Phys. Lett. 63, 17, 2366--2368.
	12	Irie, H. 2007. Private communication.
	13	Landauer, R. 1957. Spatial variation of currents and fields due to localized scatterers in metallic conduction. IBM J. Resear. Dev. 1, 3, 223--231.
	14	Landauer, R. 1970. Electrical resistance of disordered one-dimensional lattices. Philosoph. Mag. 21, 172, 863--867.
	15	Mateos, J., Gonzales, T., Pardo, D., Hoel, V., and Cappy, A. 2000. Improved Monte Carlo algorithm for the simulation of Δ-doped AlInAs/GaInAs HEMTs.IEEE Trans. Electron. Dev. 47, 1, 250--253.
	16	Mateos, J., Vasallo, B. G., Pardo, D., Gonzales, T., Galloo, J. S., Bollaert, S., Roelens, Y., and Cappy, A. 2003. Microscopic modeling of nonlinear transport in ballistic nanodevices. IEEE Trans. Electron. Dev. 50, 9, 1897--1905.
	17	Reitzenstein, S., Worschech, L., and Forchel, A. 2003. A novel half-adder circuit based on nanometric ballistic Y-Branched junctions. IEEE Electron. Dev. Lett. 24, 10, 625--627.
	18	Roukes, M. L. and Alerhand, O. L. 1990. Mesoscopic junctions, random scattering, and strange repellers. Phys. Rev. Lett. 65, 13, 1651--1653.
	19	Song, A. 2004. Room-temperature ballistic nanodevices. Encyclopedia of Nanoscience and Nanotechnology 9, 371--389.