Encountering gate oxide breakdown with shadow transistors to increase reliability

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Encountering gate oxide breakdown with shadow transistors to increase reliability

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Proceedings of the 21st annual symposium on Integrated circuits and system design table of contents

Gramado, Brazil

SESSION: Design for reliability table of contents

Pages 111-116

Year of Publication: 2008

ISBN:978-1-60558-231-3

Authors

Claas Cornelius	University of Rostock, Rostock, Germany
Frank Sill	Federal University of Minas Gerais, Belo Horizonte, Brazil
Hagen Sämrow	University of Rostock, Rostock, Germany
Jakob Salzmann	University of Rostock, Rostock, Germany
Dirk Timmermann	University of Rostock, Rostock, Germany
Diógenes da Silva	Federal University of Minas Gerais, Belo Horizonte, Brazil

Sponsors

ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation

Publisher

ACM New York, NY, USA

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Downloads (6 Weeks): 3, Downloads (12 Months): 34, Citation Count: 0

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ABSTRACT

Device scaling has enabled continuous performance increase of integrated circuits. However, severe reliability and yield concerns are arising against the background of nanotechnology. Tradition-ally, most causes and countermeasures were solely considered manufacturing issues, but lately, we have seen a shift towards op-erational reliability issues. Though, besides intense research on soft-errors and system-level approaches very little effort is put into low-level design solutions in order to enhance lifetime reliability. Hence, we demonstrate that redundant transistor insertion does im-prove system reliability significantly as regards Time-Dependent Dielectric Breakdown (TDDB). Furthermore, we introduce an al-gorithm which identifies the transistors being most vulnerable to TDDB. Subsequently, redundant transistors (called shadow transis-tors) are inserted at the previously identified instances. Lastly, we argue for applying high threshold voltage devices for the redundant transistors. Finally, we present results for a set of benchmark cir-cuits and prove the combined approach successful. The enhanced designs were on average 41.8% more reliable compared to the ini-tial designs in respect of TDDB at the price of moderately in-creased power consumption and delay.

REFERENCES

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