Metal filling impact on standard cells: definition of the metal fill corner concept

ABSTRACT

The objective of this paper is to evaluate the delay impact of staggered metal filling (Metal2) on the standard cells and their associated local interconnect (Metal1). A Design Of Experiment (DOE) is used to define a large range of filling pattern shapes and positions. This set of filling patterns is then inserted in a Ring Oscillator (RO). From the filled RO simulations, the RO delay is expressed as a function of the filling pattern features. The maximal timing error between the model and the simulation is 1.3%, validating the model. The filling impact on RO delay magnifies the one introduced by the front-end process variations (PV). Consequently, the filling influence is introduced for the minimal, typical and maximal corners, defined now with Process (P), Voltage (V), Temperature (T) and Filling density (F) characteristics.

REFERENCES

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INDEX TERMS

Primary Classification:
  G. Mathematics of Computing
  G.3 PROBABILITY AND STATISTICS
      Subjects: Probabilistic algorithms (including Monte Carlo)

Additional Classification:
  B. Hardware
  B.7 INTEGRATED CIRCUITS
      B.7.3 Reliability and Testing**

General Terms:
Algorithms, Design, Experimentation, Measurement, Reliability, Theory

Keywords:
capacitance, corners, design of experiment, dispersion, interconnect, metal filling, modelization, ring oscillators, standard cells