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A scalable algorithmic framework for row-based power-gating
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Source Design, Automation, and Test in Europe archive
Proceedings of the conference on Design, automation and test in Europe table of contents
Munich, Germany
SESSION: Power optimization by supply and ground voltage control table of contents
Pages 379-384  
Year of Publication: 2008
ISBN:978-3-9810801-3-1
Authors
A. Sathanur  Politecnico di Torino
A. Pullini  Politecnico di Torino
L. Benini  Università di Bologna
A. Macii  Politecnico di Torino
E. Macii  Politecnico di Torino
M. Poncino  Politecnico di Torino
Sponsors
: IEEE Council on Electronic Design Automation (CEDA)
EDAA : European Design Automation Association
: The EDA Consortium
SIGDA: ACM Special Interest Group on Design Automation
RAS : RAS
: The IEEE Computer Society TTTC
: ECSI
Publisher
ACM  New York, NY, USA
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ABSTRACT

Leakage power is a serious concern in nanometer CMOS technologies. In this paper we focus on leakage reduction through automatic insertion of sleep transistors for power gating in standard cell based designs. In particular, we propose clustering algorithms for row-based power-gating methodology which is based on using rows of the layout as the granularity for clustering. Our clustering methodology does timing and area constraint driven power-gating in contrast to only timing driven power-gating as proposed in the previous works. We present two distinct clustering algorithms with different accuracy-efficiency trade-off. An optimal one, which exploits a 0--1 or Binary Integer Programming approach, and a heuristic one, which resorts to an implicit enumeration of the layout rows.

Results show that, for all the benchmarks, the leakage power savings, as compared to previous techniques, are more than 75% when we have the same timing constraints but half sleep transistor area and at least 60% when area constraint is set at one fourth. We also show that we can perform clustering with no speed degradation and achieve maximum leakage power savings up-to 83%.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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F. Fallah, M. Pedram, "Standby and Active Leakage Current Control and Minimization in CMOS VLSI Circuits," IEICE Trans. on Electronics, Special Section on Low-Power LSI and Low-Power IP, Vol. E88-C, No. 4, pp. 509--519, Apr. 2005.
 
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K. Roy, and et al., "Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits," Proceedings of the IEEE, Vol. 91, No. 2, pp. 305--327, Feb. 2003.
 
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S. Mutoh, and et al., "1-V Power Supply High-Speed Digital Circuit Technology with Multi-Threshold Voltage CMOS," IEEE JSSC, Vol. 30, No. 8, pp. 847--854, Aug. 1995.
 
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M. Anis, S. Areibi, M. Elmasry, "Design and Optimization of Multi-Threshold CMOS (MTCMOS) Circuits," IEEE Trans. on Computer-Aided Design, Vol. 22, No. 10, pp. 1324--1342, Oct. 2003.
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ftp://ftp.es.ele.tue.nl/pub/lp_solve.


Collaborative Colleagues:
A. Sathanur: colleagues
A. Pullini: colleagues
L. Benini: colleagues
A. Macii: colleagues
E. Macii: colleagues
M. Poncino: colleagues