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Reducing leakage power by accounting for temperature inversion dependence in dual-Vt synthesized circuits
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International Symposium on Low Power Electronics and Design archive
Proceeding of the 13th international symposium on Low power electronics and design table of contents
Bangalore, India
POSTER SESSION: Poster session table of contents
Pages 217-220  
Year of Publication: 2008
ISBN:978-1-60558-109-5
Authors
Andrea Calimera  Politecnico di Torino, Torino, Italy
R. Iris Bahar  Brown University, Providence, RI, USA
Enrico Macii  Politecnico di Torino, Torino, Italy
Massimo Poncino  Politecnico di Torino, Torino, Italy
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

The effects of temperature on delay depend on several parameters, such as cell size, load, supply voltage, and threshold voltage. In particular, variations in Vth can yield a temperature inversion effect causing a decreases of cell delay as temperature increases. This phenomenon, besides affecting timing analysis of a design, has important and unforeseeable consequences on power optimization techniques. In this paper, we focus on the impact of such effects on multi-Vt design; in particular, we show how traditional dual-Vt optimization may yield timing errors in circuits by ignoring temperature effects. Moreover, we present a temperature-aware dual-Vt optimization technique that reduces leakage power and can guarantee that the circuit is timing feasible at the boundary temperatures provided by the technology library. Our experiments show an average 27% leakage reduction with respect to a non temperature-aware design flow.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
K. Banerjee and A. Mehrotra. Global (interconnect) warming. IEEE Circuits and Devices Magazine, pages 16--32, 2001.
2
3
 
4
R. Kumar and V. Kursun. Reversed temperature-dependent propagation delay characteristics in nanometer CMOS circuits. IEEE Trans. on Circuits and Systems, 53(10):1078--1082, Oct. 2006.
 
5
B. Lasbouygues, R. Wilson, N. Azemard, and P. Maurine. Temperature- and voltage-aware timing analysis. IEEE Transactions on CAD, 26(4):801--815, Apr. 2007.
 
6
T. Sakurai and A. R. Newton. Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas. IEEE Journal on Solid-State Circuits, 25(2):584--594, Apr. 1990.
 
7
 
8
Q. Wang and S. Vrudhula. Algorithms for minimizing standby power in deep submicrometer, dual-Vt CMOS circuits. IEEE Trans. on CAD, 21(3):306--318, Mar. 2002.

Collaborative Colleagues:
Andrea Calimera: colleagues
R. Iris Bahar: colleagues
Enrico Macii: colleagues
Massimo Poncino: colleagues