| Reducing leakage power by accounting for temperature inversion dependence in dual-Vt synthesized circuits |
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International Symposium on Low Power Electronics and Design
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Proceeding of the 13th international symposium on Low power electronics and design
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Bangalore, India
POSTER SESSION: Poster session
table of contents
Pages 217-220
Year of Publication: 2008
ISBN:978-1-60558-109-5
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Downloads (6 Weeks): 18, Downloads (12 Months): 94, Citation Count: 0
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ABSTRACT
The effects of temperature on delay depend on several parameters, such as cell size, load, supply voltage, and threshold voltage. In particular, variations in Vth can yield a temperature inversion effect causing a decreases of cell delay as temperature increases. This phenomenon, besides affecting timing analysis of a design, has important and unforeseeable consequences on power optimization techniques. In this paper, we focus on the impact of such effects on multi-Vt design; in particular, we show how traditional dual-Vt optimization may yield timing errors in circuits by ignoring temperature effects. Moreover, we present a temperature-aware dual-Vt optimization technique that reduces leakage power and can guarantee that the circuit is timing feasible at the boundary temperatures provided by the technology library. Our experiments show an average 27% leakage reduction with respect to a non temperature-aware design flow.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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