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Entry control in network-on-chip for memory power reduction
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International Symposium on Low Power Electronics and Design archive
Proceeding of the 13th international symposium on Low power electronics and design table of contents
Bangalore, India
SESSION: Multi-core power optimization table of contents
Pages 171-176  
Year of Publication: 2008
ISBN:978-1-60558-109-5
Authors
Dongwook Lee  Seoul National University, Seoul, South Korea
Sungjoo Yoo  POSTECH, Pohang, South Korea
Kiyoung Choi  Seoul National University, Seoul, South Korea
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

As high-end mobile embedded systems become data-intensive, the off-chip memory is becoming a major contributor to the total energy consumption. Especially, high-end mobile chips accommodate dedicated hardware blocks, e.g., codec and 3D graphics IP's, required for both performance and power consumption reasons. Those IP's usually do not have a large shared memory on chip. Thus, they communicate with each other via the off-chip DDR memory increasing off-chip memory accesses, which increases memory energy consumption during read/write operations. In this paper, we present a method of reducing memory energy consumption during read/write operations. It aims at minimizing the number of row opens and closes, which are the major source of energy consumption during read/write operations. The basic idea is to apply network entry control to prioritize consecutive open row memory accesses. The experimental results show up to 35% reduction in memory energy consumption with an industrial strength multimedia mobile SoC.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Samsung mobile DDR memory, http://www.samsung.com/global/ business/semiconductor/products/dram/Products_MobileSDRAM.html.
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H. Kim and I. Park, "High-Performance and Low-Power Memory Interface Architecture", IEEE Trans. on CAS for Video Technology, vol. 11, no. 11, Nov. 2001.
 
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Sonics MemMAX 2.0 Datasheet, http://www.sonicsinc.com.
 
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Micron Tech., "Calculating DDR Memory System Power", http://www.micron.com/products/dram/ddrsdram/ technote.html.
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512Mb DDR2 SDRAM Component, MT47H128M4B6-5E, http://www.micron.com/.

Collaborative Colleagues:
Dongwook Lee: colleagues
Sungjoo Yoo: colleagues
Kiyoung Choi: colleagues