| Increasing minimum operating voltage (VDDmin) with number of CMOS logic gates and experimental verification with up to 1Mega-stage ring oscillators |
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International Symposium on Low Power Electronics and Design
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Proceeding of the 13th international symposium on Low power electronics and design
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Bangalore, India
SESSION: Low voltage logic and memory
table of contents
Pages 117-122
Year of Publication: 2008
ISBN:978-1-60558-109-5
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Authors
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Taro Niiyama
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University of Tokyo, Tokyo, Japan
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Zhe Piao
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University of Tokyo, Tokyo, Japan
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Koichi Ishida
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University of Tokyo, Tokyo, Japan
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Masami Murakata
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STARC, Yokohama, Japan
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Makoto Takamiya
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University of Tokyo, Tokyo, Japan
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Takayasu Sakurai
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University of Tokyo, Tokyo, Japan
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Downloads (6 Weeks): 5, Downloads (12 Months): 61, Citation Count: 0
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ABSTRACT
In order to explore the feasibility of the large scale subthreshold logic circuits and to clarify the lower limit of supply voltage (VDD) for logic circuits, the dependence of minimum operating voltage (VDDmin) of CMOS logic gates on the number of stages, gate types and gate width is systematically measured with 90-nm CMOS ring oscillators (RO's). The measured average VDDmin of inverter RO's increased from 90 mV to 343 mV when the number of RO stages increased from 11 to 1Mega, which indicates the difficulty of the VDD scaling in the large scale subthreshold logic circuits. The dependence of VDDmin on the number of stages is calculated with the subthreshold current model with random threshold voltage (VTH) variations and compared with the measured results, which confirm the tendency of the measurement.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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Taro Niiyama , Piao Zhe , Koichi Ishida , Masami Murakata , Makoto Takamiya , Takayasu Sakurai, Dependence of Minimum Operating Voltage (VDDmin) on Block Size of 90-nm CMOS Ring Oscillators and its Implications in Low Power DFM, Proceedings of the 9th international symposium on Quality Electronic Design, p.133-136, March 17-19, 2008
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