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A reconfigurable FTL (flash translation layer) architecture for NAND flash-based applications
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ACM Transactions on Embedded Computing Systems (TECS) archive
Volume 7 ,  Issue 4  (July 2008) table of contents
Article No. 38  
Year of Publication: 2008
ISSN:1539-9087
Authors
Chanik Park  Samsung Electronics, Hwasung-City, Korea
Wonmoon Cheon  Samsung Electronics, Hwasung-City, Korea
Jeonguk Kang  Samsung Electronics, Hwasung-City, Korea
Kangho Roh  Samsung Electronics, Hwasung-City, Korea
Wonhee Cho  Samsung Electronics, Hwasung-City, Korea
Jin-Soo Kim  Korea Advanced Institute of Science and Technology, Daejeon, Korea
Publisher
ACM  New York, NY, USA
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ABSTRACT

In this article, a novel FTL (flash translation layer) architecture is proposed for NAND flash-based applications such as MP3 players, DSCs (digital still cameras) and SSDs (solid-state drives). Although the basic function of an FTL is to translate a logical sector address to a physical sector address in flash memory, efficient algorithms of an FTL have a significant impact on performance as well as the lifetime. After the dominant parameters that affect the performance and endurance are categorized, the design space of the FTL architecture is explored based on a diverse workload analysis. With the proposed FTL architectural framework, it is possible to decide which configuration of FTL mapping parameters yields the best performance, depending on the differing characteristics of various NAND flash-based applications.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Ban, A. 1995. Flash file system. United States Patent, No. 5,404,485 (Apr.).
 
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Kim, J. S., Kim, J. M., Noh, S. H., Min, S. L., and Cho, Y. K. 2002. A space-efficient flash translation layer for compact flash systems. IEEE Trans. Cons. Elect. 48, 366--375.
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Min, S. L. 2004. Love/hate relationship between flash memory and microdrive for low-power portable storage. In 1st International Workshop on Power-Aware Real-Time Computing, Pisa, Italy.
 
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Samsung Electronics. 2005. NAND Flash Memory & Smart-Media Data Book.


Collaborative Colleagues:
Chanik Park: colleagues
Wonmoon Cheon: colleagues
Jeonguk Kang: colleagues
Kangho Roh: colleagues
Wonhee Cho: colleagues
Jin-Soo Kim: colleagues