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Three-dimensional on-chip inductance and resistance extraction
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Proceedings of the 20th annual conference on Integrated circuits and systems design table of contents
Copacabana, Rio de Janeiro
SESSION: Device modeling and simulation - part 2 table of contents
Pages: 218 - 223  
Year of Publication: 2007
ISBN:978-1-59593-816-9
Authors
Alexandre Nentchev  TU Vienna, Vienna, Austria
Siegfried Selberherr  TU Vienna, Vienna, Austria
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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ABSTRACT

An efficient three-dimensional finite element frequency domain method to extract the inductance and resistance of small structures like on-chip interconnects or on-chip inductors is presented. Skin effect and proximity effectare taken into account. The parameters are obtained fromthe field energy calculated from the magnetic field distribution in the simulation domain. The small dimensions of the domain of interest provide the opportunity of using the optimized model of dominant magnetic field even at very high operating frequencies. Vector and scalar shape functions are used for finite element equation system assembling. Series of simulations for an instancing on-chip inductor at frequencies between 1 MHz and 100 GHz are performed to extract the parameters and to visualize the field distributions in the simulation area.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Alexandre Nentchev: colleagues
Siegfried Selberherr: colleagues