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Novel CNTFET-based reconfigurable logic gate design
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 44th annual Design Automation Conference table of contents
San Diego, California
SESSION: Wild and crazy ideas (WACI) table of contents
Pages: 276 - 277  
Year of Publication: 2007
ISBN ~ ISSN:0738-100X , 978-1-59593-627-1
Authors
J. Liu  Institut des Nanotechnologies de Lyon (INL), Ecully, France
I. O'Connor  Institut des Nanotechnologies de Lyon (INL), Ecully, France
D. Navarro  Institut des Nanotechnologies de Lyon (INL), Ecully, France
F. Gaffiot  Institut des Nanotechnologies de Lyon (INL), Ecully, France
Sponsors
: The EDA Consortium
: IEEE/CASS/CANDE/CEDA
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

This paper describes a dynamically reconfigurable 8-function logic gate (CNT-DR8F) based on a double-gate carbon nanotube field effect transistor (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Using available models, CNT-DR8F is proposed, simulated and analyzed at 20GHz operation. We also give an example functional block (full adder) to show how to construct logic circuits based on the association of physically identical reconfigurable logic cells.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
R. Chau et al. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications. IEEE Trans. Nanotechnology, vol. 4, no. 2, pp. 153--158, March 2005.
 
2
A. Raychowdhury, K. Roy. Carbon-Nanotube-Based Voltage-Mode Multiple-Valued Logic Design. IEEE Trans. Nanotechnology, vol. 4, no. 2, pp. 168--179, March 2005.
 
3
R. Sordan, K. Balasubramanian, M. Burghard, K. Kern. Exclusive-OR gate with a single carbon nanotube. Appl. Phys. Lett., vol. 88, 053119, 2006
 
4
Y. Lin, J. Appenzeller, J. Knoch, and P. Avouris., High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities. IEEE Trans. Nanotechnology, vol. 4, no. 5, September 2005.
 
5
C. Maneux, et al. Analysis of CNTFET physical compact model. In Proc. DTIS 2006, 5--7 September, 2006, Tunis, Tunisia


Collaborative Colleagues:
J. Liu: colleagues
I. O'Connor: colleagues
D. Navarro: colleagues
F. Gaffiot: colleagues