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Statistical analysis of full-chip leakage power considering junction tunneling leakage
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 44th annual Design Automation Conference table of contents
San Diego, California
SESSION: Leakage power analysis and optimization table of contents
Pages: 99 - 102  
Year of Publication: 2007
ISBN ~ ISSN:0738-100X , 978-1-59593-627-1
Authors
Tao Li  Tsinghua University, Beijing, China
Zhiping Yu  Tsinghua University, Beijing, China
Sponsors
: The EDA Consortium
: IEEE/CASS/CANDE/CEDA
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

In this paper we address the the growing issue of junction tunneling leakage (Ijunc) at the circuit level. Specifically, we develop a fast approach to analyze the state-dependent total leakage power of a large circuit block, considering Ijunc, sub-threshold leakage (Isub), and gate oxide leakage (Igate). We then propose our algorithm to estimate the full-chip leakage power with consideration of both Gaussian and non-Gaussian parameter distributions, capturing spatial correlations using a grid-based model. Experiments on ISCAS85 benchmarks demonstrate that the estimated results are very accurate and efficient. For a circuit with G gates, the complexity of our approach is O(G).


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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S. Mukhopadhyay, S. Member, A. Raychowdhury, S. Member, and K. Roy. Accurate estimation of total leakage in nanometer-scale bulk cmos circuits based on device geometry and doping profile. IEEE Trans. CAD, 24(3):363--381, March 2005.
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A. Papoulis and S. Pillai. Probability, Random Variables and Stochastic Processes. McGraw-Hill, 2001.